In solar cells, particularly Cu(In,Ga)Se2 (CIGS), Al-doped ZnO thin films are used as the top or the bottom transparent conducting window layer. This study examined the efficiency of CIGS solar cells as a function of the Al-doped ZnO film thickness. A CIGS solar cell with an Al/ZnO:Al/i-ZnO/CdS/ CIGS/Mo structure was fabricated. A 50-nm-thick intrinsic ZnO thin film was deposited by RF magnetron sputtering. The fill-factor and the conversion efficiency of a CIGS solar cell with a 310-nm-thick AZO thin film were calculated to be 0.67 and 13.54 %, respectively, from the results of the J-V measurements.
- Al-doped ZnO
- CIGS solar cell
- Conversion efficiency
- Transparent conductive oxide (TCO)
ASJC Scopus subject areas
- General Physics and Astronomy