Abstract
In solar cells, particularly Cu(In,Ga)Se2 (CIGS), Al-doped ZnO thin films are used as the top or the bottom transparent conducting window layer. This study examined the efficiency of CIGS solar cells as a function of the Al-doped ZnO film thickness. A CIGS solar cell with an Al/ZnO:Al/i-ZnO/CdS/ CIGS/Mo structure was fabricated. A 50-nm-thick intrinsic ZnO thin film was deposited by RF magnetron sputtering. The fill-factor and the conversion efficiency of a CIGS solar cell with a 310-nm-thick AZO thin film were calculated to be 0.67 and 13.54 %, respectively, from the results of the J-V measurements.
Original language | English |
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Pages (from-to) | 437-441 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 Jul |
Keywords
- Al-doped ZnO
- CIGS solar cell
- Conversion efficiency
- Transparent conductive oxide (TCO)
ASJC Scopus subject areas
- General Physics and Astronomy