Abstract
Tandem solar cells, based on perovskite and crystalline silicon absorbers, are promising candidates for commercial applications. Tin oxide (SnO2 ), applied via the spin-coating method, has been among the most used electron transfer layers in normal (n-i-p) perovskite/silicon tandem cells. SnO2 synthesized by chemical bath deposition (CBD) has not yet been applied in tandem devices. This method shows improved efficiency in perovskite single cells and allows for deposition over a larger area. Our study is the first to apply low-temperature processed SnO2 via CBD to a homojunction silicon solar cell without additional deposition of a recombination layer. By controlling the reaction time, a tandem efficiency of 16.9% was achieved. This study shows that tandem implementation is possible through the CBD method, and demonstrates the potential of this method in commercial application to textured silicon surfaces with large areas.
Original language | English |
---|---|
Article number | 7614 |
Journal | Energies |
Volume | 14 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2021 Nov 1 |
Bibliographical note
Funding Information:Funding: This research was supported by the Technology Development Program to Solve Climate Change of the National Research Foundation (NRF) funded by the Ministry of Science and ICT (NRF-2017M1A2A2087351) and the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (NRF-2020R1A2C1011815), and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (NRF-2020R1A2C3009115). This work was also supported by the KU-KIST Graduate School Project.
Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
- Chemical bath deposition
- Perovskite/silicon
- Tandem solar cells
- Tin oxide
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Energy Engineering and Power Technology
- Energy (miscellaneous)
- Control and Optimization
- Electrical and Electronic Engineering