Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor

Kyung Jae Lee; Sanghoon Lee; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna

doi:10.1109/INTERMAGShortPapers61879.2024.10576880

Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor

Kyung Jae Lee
, Sanghoon Lee^*
, Xinyu Liu
, M. Dobrowolska
, Jacek K. Furdyna

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This study explores spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic film of crystalline (Ga,Mn)(As,P) characterized by perpendicular anisotropy. The magnetization switching in the film is discerned through the hysteresis of Hall resistance (HR) during current scan measurements. The observed chirality in HR hysteresis aligns with the SOT generated by current-induced Rashba- and Dresselhaus-type spin orbit fields (SOFs) within the tensile strained (Ga,Mn)(As,P) film. As temperature increases, the critical current systematically diminishes, reaching a minimum of J ∼ 4 × 10³ A/cm² at 65 K. This investigation reveals the feasibility of SOT-induced magnetization switching at remarkably low current densities in a single layer of ferromagnetic film, offering a novel avenue for the development of uncomplicated and energy-efficient spintronic devices.

Original language	English
Title of host publication	2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350362213
DOIs	https://doi.org/10.1109/INTERMAGShortPapers61879.2024.10576880
Publication status	Published - 2024
Event	2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Rio de Janeiro, Brazil Duration: 2024 May 5 → 2024 May 10

Publication series

Name	2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings

Conference

Conference	2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024
Country/Territory	Brazil
City	Rio de Janeiro
Period	24/5/5 → 24/5/10

Bibliographical note

Publisher Copyright:
© 2024 IEEE.

Keywords

Ferromagnetic materials
Hall effect
Magnetic semiconductors
Magnetoresistance

ASJC Scopus subject areas

Automotive Engineering
Mechanical Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/INTERMAGShortPapers61879.2024.10576880

Cite this

Lee, K. J., Lee, S., Liu, X., Dobrowolska, M., & Furdyna, J. K. (2024). Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor. In 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings (2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTERMAGShortPapers61879.2024.10576880

Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor. / Lee, Kyung Jae; Lee, Sanghoon; Liu, Xinyu et al.
2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. (2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, KJ, Lee, S, Liu, X, Dobrowolska, M & Furdyna, JK 2024, Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor. in 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings. 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024, Rio de Janeiro, Brazil, 24/5/5. https://doi.org/10.1109/INTERMAGShortPapers61879.2024.10576880

Lee KJ, Lee S, Liu X, Dobrowolska M, Furdyna JK. Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor. In 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2024. (2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings). doi: 10.1109/INTERMAGShortPapers61879.2024.10576880

Lee, Kyung Jae ; Lee, Sanghoon ; Liu, Xinyu et al. / Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor. 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. (2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings).

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title = "Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor",

abstract = "This study explores spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic film of crystalline (Ga,Mn)(As,P) characterized by perpendicular anisotropy. The magnetization switching in the film is discerned through the hysteresis of Hall resistance (HR) during current scan measurements. The observed chirality in HR hysteresis aligns with the SOT generated by current-induced Rashba- and Dresselhaus-type spin orbit fields (SOFs) within the tensile strained (Ga,Mn)(As,P) film. As temperature increases, the critical current systematically diminishes, reaching a minimum of J ∼ 4 × 103 A/cm2 at 65 K. This investigation reveals the feasibility of SOT-induced magnetization switching at remarkably low current densities in a single layer of ferromagnetic film, offering a novel avenue for the development of uncomplicated and energy-efficient spintronic devices.",

keywords = "Ferromagnetic materials, Hall effect, Magnetic semiconductors, Magnetoresistance",

author = "Lee, \{Kyung Jae\} and Sanghoon Lee and Xinyu Liu and M. Dobrowolska and Furdyna, \{Jacek K.\}",

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doi = "10.1109/INTERMAGShortPapers61879.2024.10576880",

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AU - Lee, Kyung Jae

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AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

PY - 2024

Y1 - 2024

N2 - This study explores spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic film of crystalline (Ga,Mn)(As,P) characterized by perpendicular anisotropy. The magnetization switching in the film is discerned through the hysteresis of Hall resistance (HR) during current scan measurements. The observed chirality in HR hysteresis aligns with the SOT generated by current-induced Rashba- and Dresselhaus-type spin orbit fields (SOFs) within the tensile strained (Ga,Mn)(As,P) film. As temperature increases, the critical current systematically diminishes, reaching a minimum of J ∼ 4 × 103 A/cm2 at 65 K. This investigation reveals the feasibility of SOT-induced magnetization switching at remarkably low current densities in a single layer of ferromagnetic film, offering a novel avenue for the development of uncomplicated and energy-efficient spintronic devices.

AB - This study explores spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic film of crystalline (Ga,Mn)(As,P) characterized by perpendicular anisotropy. The magnetization switching in the film is discerned through the hysteresis of Hall resistance (HR) during current scan measurements. The observed chirality in HR hysteresis aligns with the SOT generated by current-induced Rashba- and Dresselhaus-type spin orbit fields (SOFs) within the tensile strained (Ga,Mn)(As,P) film. As temperature increases, the critical current systematically diminishes, reaching a minimum of J ∼ 4 × 103 A/cm2 at 65 K. This investigation reveals the feasibility of SOT-induced magnetization switching at remarkably low current densities in a single layer of ferromagnetic film, offering a novel avenue for the development of uncomplicated and energy-efficient spintronic devices.

KW - Ferromagnetic materials

KW - Hall effect

KW - Magnetic semiconductors

KW - Magnetoresistance

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DO - 10.1109/INTERMAGShortPapers61879.2024.10576880

M3 - Conference contribution

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BT - 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024

Y2 - 5 May 2024 through 10 May 2024

ER -

Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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