Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers

Jiancheng Yang; Chaker Fares; Yu Guan; F. Ren; S. J. Pearton; Jinho Bae; Jihyun Kim; Akito Kuramata

doi:10.1116/1.5027613

Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga₂O₃ Schottky rectifiers

Jiancheng Yang, Chaker Fares, Yu Guan, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim, Akito Kuramata

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Homoepitaxial Ga₂O₃ rectifiers with vertical geometry were subject to 18 MeV alpha particle irradiation at fluences of 10¹²-10¹³ cm^-2, simulating space radiation exposure. The range of these particles (∼80 μm) is much greater than the drift layer thickness in the structures (∼7 μm). The carrier removal rates were in the range of 406-728 cm^-1 for these conditions. These values are factors of 2-3 higher than for high energy (10 MeV) protons and 2 orders of magnitude higher than for 1.5 MeV electron irradiation of the same material. The on-state resistance of the rectifiers is more degraded by alpha particle irradiation than either ideality factor or barrier height. The reverse breakdown voltage of the rectifiers increases with alpha particle dose as carriers in the drift region are removed by trapping into traps created by the radiation damage. The on/off ratio of the rectifiers was severely degraded by alpha particle-induced damage, but the reverse recovery characteristics were unaffected even by the highest dose, with values around ∼20 ns.

Original language	English
Article number	031205
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	36
Issue number	3
DOIs	https://doi.org/10.1116/1.5027613
Publication status	Published - 2018 May 1

Bibliographical note

Funding Information:
This project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The research at Korea University was supported by the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant from the Ministry of Trade, Industry and Energy, Republic of Korea (20173010012970 and 20172010104830). Part of the work at Tamura was supported by The research and development project for innovation technique of energy conservation of the New Energy and Industrial Technology Development Organization (NEDO), Japan.

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.5027613

Cite this

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title = "Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers",

abstract = "Homoepitaxial Ga2O3 rectifiers with vertical geometry were subject to 18 MeV alpha particle irradiation at fluences of 1012-1013 cm-2, simulating space radiation exposure. The range of these particles (∼80 μm) is much greater than the drift layer thickness in the structures (∼7 μm). The carrier removal rates were in the range of 406-728 cm-1 for these conditions. These values are factors of 2-3 higher than for high energy (10 MeV) protons and 2 orders of magnitude higher than for 1.5 MeV electron irradiation of the same material. The on-state resistance of the rectifiers is more degraded by alpha particle irradiation than either ideality factor or barrier height. The reverse breakdown voltage of the rectifiers increases with alpha particle dose as carriers in the drift region are removed by trapping into traps created by the radiation damage. The on/off ratio of the rectifiers was severely degraded by alpha particle-induced damage, but the reverse recovery characteristics were unaffected even by the highest dose, with values around ∼20 ns.",

author = "Jiancheng Yang and Chaker Fares and Yu Guan and F. Ren and Pearton, {S. J.} and Jinho Bae and Jihyun Kim and Akito Kuramata",

note = "Funding Information: This project was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The research at Korea University was supported by the New and Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant from the Ministry of Trade, Industry and Energy, Republic of Korea (20173010012970 and 20172010104830). Part of the work at Tamura was supported by The research and development project for innovation technique of energy conservation of the New Energy and Industrial Technology Development Organization (NEDO), Japan. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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AU - Yang, Jiancheng

AU - Fares, Chaker

AU - Guan, Yu

AU - Ren, F.

AU - Pearton, S. J.

AU - Bae, Jinho

AU - Kim, Jihyun

AU - Kuramata, Akito

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N2 - Homoepitaxial Ga2O3 rectifiers with vertical geometry were subject to 18 MeV alpha particle irradiation at fluences of 1012-1013 cm-2, simulating space radiation exposure. The range of these particles (∼80 μm) is much greater than the drift layer thickness in the structures (∼7 μm). The carrier removal rates were in the range of 406-728 cm-1 for these conditions. These values are factors of 2-3 higher than for high energy (10 MeV) protons and 2 orders of magnitude higher than for 1.5 MeV electron irradiation of the same material. The on-state resistance of the rectifiers is more degraded by alpha particle irradiation than either ideality factor or barrier height. The reverse breakdown voltage of the rectifiers increases with alpha particle dose as carriers in the drift region are removed by trapping into traps created by the radiation damage. The on/off ratio of the rectifiers was severely degraded by alpha particle-induced damage, but the reverse recovery characteristics were unaffected even by the highest dose, with values around ∼20 ns.

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