Skip to main navigation
Skip to search
Skip to main content
Sort by
Keyphrases
Indium Gallium Nitride (InGaN)
100%
Electric Field Dependence
100%
External Electric Field
100%
Radiative Recombination
100%
Recombination Lifetime
100%
Quantum Heterostructure
100%
Electric Field (E-field)
66%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
C-plane
33%
GaN Layers
33%
Indium Tin Oxide
33%
Order of Magnitude
33%
Quantum Well
33%
Sapphire Substrate
33%
Metallization
33%
P-GaN
33%
Reactive Ion Etching
33%
Photolithography
33%
PIN Diode
33%
Oxide-based
33%
Carrier Lifetime
33%
Transfer Matrix Method
33%
TO-CAN
33%
Barrier Layer
33%
Transparent Contacts
33%
Weak Dependence
33%
GaN Barriers
33%
Fermi's Golden Rule
33%
Semitransparent
33%
Electrostatic Field
33%
Engineering
Heterostructures
100%
Radiative Recombination
100%
Recombination Lifetime
100%
Electric Field
100%
External Electric Field
75%
Simulation Result
25%
Quantum Well
25%
Metal Organic Chemical Vapor Deposition
25%
Indium-Tin-Oxide
25%
Sapphire Substrate
25%
Metallizations
25%
Optical Lithography
25%
Induced Polarization
25%
Carrier Lifetime
25%
Barrier Layer
25%
Matrix Method
25%
Material Science
Heterojunction
100%
Metal-Organic Chemical Vapor Deposition
33%
Quantum Well
33%
Sapphire
33%
Indium Tin Oxide
33%
Reactive Ion Etching
33%
Carrier Lifetime
33%
Chemistry
Electric Field
100%
Radiative Recombination
100%
Indium Tin Oxide
14%
Sapphire
14%
Metal-Organic Chemical Vapor Deposition
14%
Physics
Electric Field
100%
Indium
14%
Quantum Wells
14%
Photolithography
14%
Transfer-Matrix Method
14%
Metalorganic Chemical Vapor Deposition
14%
Surface Properties
14%
Metallizing
14%