Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots

S. R.Eric Yang; N. Y. Hwang; S. C. Kim; Y. J. Kim; P. S. Park

doi:10.1016/j.physe.2007.08.041

Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots

S. R.Eric Yang, N. Y. Hwang, S. C. Kim, Y. J. Kim, P. S. Park

Research output: Contribution to journal › Article › peer-review

Abstract

Several different n-type nano semiconductor systems exhibit non-Abelian matrix Berry phases. Non-Abelian matrix Berry phases can be generated by an all electric means in II-VI and III-V n-type semiconductor quantum dots with spin-orbit coupling terms. Non-Abelian matrix Berry phases also appear in semiconductor quantum pumps, and pumped charges can be understood as a manifestation of a non-Abelian matrix Berry phase. In this paper we elucidate the common properties of these semiconductor systems that are responsible for the presence of non-Abelian matrix Berry phases.

Original language	English
Pages (from-to)	1241-1242
Number of pages	2
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.08.041
Publication status	Published - 2008 Mar

Bibliographical note

Funding Information:
This work was supported by Grant no. R01-2005-000-10352-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and by The Second Brain Korea 21 Project.

Keywords

Adiabatic
Berry
Dot
Matrix
Non-Abelian
Phase
Quantum

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2007.08.041

Cite this

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title = "Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots",

abstract = "Several different n-type nano semiconductor systems exhibit non-Abelian matrix Berry phases. Non-Abelian matrix Berry phases can be generated by an all electric means in II-VI and III-V n-type semiconductor quantum dots with spin-orbit coupling terms. Non-Abelian matrix Berry phases also appear in semiconductor quantum pumps, and pumped charges can be understood as a manifestation of a non-Abelian matrix Berry phase. In this paper we elucidate the common properties of these semiconductor systems that are responsible for the presence of non-Abelian matrix Berry phases.",

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author = "Yang, {S. R.Eric} and Hwang, {N. Y.} and Kim, {S. C.} and Kim, {Y. J.} and Park, {P. S.}",

note = "Funding Information: This work was supported by Grant no. R01-2005-000-10352-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and by The Second Brain Korea 21 Project.",

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AU - Hwang, N. Y.

AU - Kim, S. C.

AU - Kim, Y. J.

AU - Park, P. S.

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AB - Several different n-type nano semiconductor systems exhibit non-Abelian matrix Berry phases. Non-Abelian matrix Berry phases can be generated by an all electric means in II-VI and III-V n-type semiconductor quantum dots with spin-orbit coupling terms. Non-Abelian matrix Berry phases also appear in semiconductor quantum pumps, and pumped charges can be understood as a manifestation of a non-Abelian matrix Berry phase. In this paper we elucidate the common properties of these semiconductor systems that are responsible for the presence of non-Abelian matrix Berry phases.

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Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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