Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. Kim; F. Ren; M. E. Overberg; G. T. Thaler; C. R. Abernathy; S. J. Pearton; C. M. Lee; J. I. Chyi; R. G. Wilson; J. M. Zavada

doi:10.1016/S0038-1101(02)00463-X

Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 10¹⁶ cm^-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

Original language	English
Pages (from-to)	963-968
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(02)00463-X
Publication status	Published - 2003 Jun
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(02)00463-X

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kim, J., Ren, F., Overberg, M. E., Thaler, G. T., Abernathy, C. R., Pearton, S. J., Lee, C. M., Chyi, J. I., Wilson, R. G., & Zavada, J. M. (2003). Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn. Solid-State Electronics, 47(6), 963-968. https://doi.org/10.1016/S0038-1101(02)00463-X

Polyakov, AY, Smirnov, NB, Govorkov, AV, Kim, J, Ren, F, Overberg, ME, Thaler, GT, Abernathy, CR, Pearton, SJ, Lee, CM, Chyi, JI, Wilson, RG & Zavada, JM 2003, 'Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn', Solid-State Electronics, vol. 47, no. 6, pp. 963-968. https://doi.org/10.1016/S0038-1101(02)00463-X

@article{1795b5cd74574c8eaa9c4b5f207c5c9c,

title = "Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn",

abstract = "Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and J. Kim and F. Ren and Overberg, {M. E.} and Thaler, {G. T.} and Abernathy, {C. R.} and Pearton, {S. J.} and Lee, {C. M.} and Chyi, {J. I.} and Wilson, {R. G.} and Zavada, {J. M.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 01-02-17230). The work at UF is partially supported by NSF(CTS 991173, DMR 0101438) and ARO. The work of RGW is also partially supported by ARO. The work at NCU was supported by the National Science Council of Republic of China under contract no. NSC 90-2215-E-008-038 and the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, 91-E-FA06-1-4.",

year = "2003",

month = jun,

doi = "10.1016/S0038-1101(02)00463-X",

language = "English",

volume = "47",

pages = "963--968",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kim, J.

AU - Ren, F.

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Lee, C. M.

AU - Chyi, J. I.

AU - Wilson, R. G.

AU - Zavada, J. M.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 01-02-17230). The work at UF is partially supported by NSF(CTS 991173, DMR 0101438) and ARO. The work of RGW is also partially supported by ARO. The work at NCU was supported by the National Science Council of Republic of China under contract no. NSC 90-2215-E-008-038 and the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, 91-E-FA06-1-4.

PY - 2003/6

Y1 - 2003/6

N2 - Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

AB - Electrical and luminescent properties of GaN/InGaN multiquantum well light emitting diodes (MQW LEDs) with the top p-GaN layer implanted with 3 × 1016 cm-2 Mn ions for potential spin-polarized emission are reported. The forward current in the Mn-implanted diodes was limited by filling of hole traps in the high-resistivity implanted region, the most shallow hole traps having the activation energy of 0.27 eV. Admittance spectroscopy and deep level transient spectroscopy measurements also revealed the presence in the implanted region of traps with apparent activation energies of 0.23, 0.43, 0.5, 0.65 and 0.85 eV. Microcathodoluminescence spectra of the implanted diodes are dominated by two defect bands, the blue band centered near 2.8 eV and the yellow band centered near 2.25 eV, in contrast to the MCL spectra of the virgin diodes dominated by the 2.67 eV band coming from recombination in the GaN/InGaN MQW region. The high resistivity of the implanted region and the high density of deep traps in this region lead to a strong increase in the threshold voltage for the onset of electroluminescence from about 4 V before implantation to about 8 V after implantation.

UR - http://www.scopus.com/inward/record.url?scp=0037408999&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00463-X

DO - 10.1016/S0038-1101(02)00463-X

M3 - Article

AN - SCOPUS:0037408999

SN - 0038-1101

VL - 47

SP - 963

EP - 968

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

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