Electrical and luminescent properties and deep traps spectra of N-polar GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Q. Sun, Y. Zhang, Y. S. Cho, I. H. Lee, J. Han

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Electrical and luminescent properties of N-polar undoped GaN films grown using low temperature GaN buffers on on-axis and miscut sapphire and on-axis AlN buffers are compared to the properties of Ga-polar films grown on low temperature GaN buffers. It is shown that the concentration of residual donors increases by about an order of magnitude for on-axis N-polar growth and by two orders of magnitude for off-axis growth compared to Ga-polar films. On-axis films for both Ga-polar and N-polar polarities show the presence of n+ interfacial layers greatly influencing the apparent electron concentration and mobility deduced from capacitance-voltage C-V measurements. These interfacial layers are much less prominent in the miscut N-polar films. Growth on N-polar greatly increases the concentration of electron traps with activation energy of 0.9 eV possibly related to Ga-interstitials.

Original languageEnglish
Pages (from-to)83-88
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1
Publication statusPublished - 2010 Jan 15
Externally publishedYes

Bibliographical note

Funding Information:
The work at IRM was supported in part by RFBR grants # 07-02-13523-ofi-c , 08-02-00058-a . The work at Yale University was supported by the United States Department of Energy under contract DE-FC26-07NT43227 .


  • Deep traps
  • III-Nitrides
  • N-polar

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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