Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, R. M. Frazier, B. P. Gila, C. R. Abernathy, S. J. Pearton, I. A. Buyanova, G. Y. Rudko, W. M. Chen, C. C. Pan, G. T. Chen, J. I. Chyi, J. M. Zavada

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn, This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

Original languageEnglish
Pages (from-to)241-247
Number of pages7
JournalJournal of Electronic Materials
Volume33
Issue number3
DOIs
Publication statusPublished - 2004 Mar
Externally publishedYes

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant No. 01–02–17230). The authors thank Dr. M.G. Vasil’ev, Institute of Inorganic Chemistry RAS, for the assistance in mounting and wire bonding the LEDs studied in this paper. The work at Linkoping University was partially supported by the Swedish Research Council, the Wenner–Gren Foundation, the Swedish Royal Academy of Sciences, and INTAS. The work at UF was partially supported by the U.S. Army Research Office under Grant Nos. DAAG55– 98–1–0216 and DAAD 190210420 and by the National Science Foundation under Grant Nos. DMR 0101438 and ECS-02242203. The work at NCU was partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06–1–4) and the National Science Council of the Republic of China (Grant No. NSC89–2215–E–008–031).

Keywords

  • Electroluminescence (EL)
  • GaN/InGaN
  • Light-emitting diodes (LEDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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