Abstract
In this study, we report the electrical and mechanical characteristics of fully transparent indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated on stress-relieving bendable substrates. An IZO TFT on a stress-relieving substrate can operate normally at a bending radius of 6 mm, while an IZO TFT on a normal plastic substrate fails to operate normally at a bending radius of 15 mm. A plastic island with high Young's modulus embedded on a soft elastomer layer with low Young's modulus plays the role of a stress-relieving substrate for the operation of the bent IZO TFT. The stress and strain distributions over the IZO TFT will be analyzed in detail in this paper.
| Original language | English |
|---|---|
| Article number | 143504 |
| Journal | Applied Physics Letters |
| Volume | 109 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2016 Oct 3 |
Bibliographical note
Funding Information:This work was supported in part by the Mid-career Researcher Program (Nos. NRF-2013R1A2A1A03070750 and NRF-2015R1A2A1A15055437); the grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674) and the Basic Science Research Program (No. NRF-2015R1D1A1A01057641) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science, and Technology; the Samsung Display Co. Ltd., and the Brain Korea 21 Plus Project, in 2016.
Publisher Copyright:
© 2016 Author(s).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)