Electrical and optical characterization of GaN micro-wires

Younghun Jung, Jaehui Ahn, Michael A. Mastro, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A near atmospheric pressure solution growth process was developed to produce an abundant quantity of GaN micro-wires in the c-direction with a length of tens of microns and a diameter of approximately 110 μm. Raman analysis showed that the micro-wires were free of stress which was expected for a free-forming crystal. The lack of stress and extended defects in the GaN micro-wire provided a useful test-bed to directly compare the wet-etch behavior of the polar c-planes and non-polar m-planes in GaN. The etch behavior at the end of the micro-wire (±c) was dramatically different, with the (0 0 0 1) plane found to be stable and the (0 0 0 -1) plane observed to rapidly etch into nanoscale hexagonal pyramids. Additionally a dielectrophoretic method was employed to readily align the wires as part of a larger device processing sequence.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2011 Jul 1


  • A1. Etching
  • A1. Nanostructues
  • B1. Nitrides
  • B3. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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