Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells

Han Kyu Seo; Eun A. Ok; Won Mok Kim; Jong Keuk Park; Tae Yeon Seong; Dong Wha Lee; Hoon Young Cho; Jeung Hyun Jeong

doi:10.1016/j.tsf.2013.05.024

Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se₂ junction properties in Cu(In,Ga)Se₂ solar cells

Han Kyu Seo, Eun A. Ok, Won Mok Kim, Jong Keuk Park, Tae Yeon Seong, Dong Wha Lee, Hoon Young Cho, Jeung Hyun Jeong

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se₂ (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I-V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I-V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I-V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process.

Original language	English
Pages (from-to)	289-293
Number of pages	5
Journal	Thin Solid Films
Volume	546
DOIs	https://doi.org/10.1016/j.tsf.2013.05.024
Publication status	Published - 2013 Nov 1

Bibliographical note

Funding Information:
This work was supported by the KIST institutional program (Project No. 2E23822 ). The authors also appreciate the financial support from the “Development of 25% efficiency grade tandem CIGS thin film solar cell core technology ( B551179-12-01-00 )” of MOTIE (Ministry of Trade, Industry & Energy) and ISTK (Korea Research Council for Industrial Science and Technology) of Republic of Korea .

Keywords

CBD-CdS
CIGS solar cell
DLTS
Metastability
Photoluminescence
Recombination

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.tsf.2013.05.024

Cite this

@article{c4f2d61354c54f2f8db677270ecf4982,

title = "Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells",

abstract = "The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se2 (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I-V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I-V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I-V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process.",

keywords = "CBD-CdS, CIGS solar cell, DLTS, Metastability, Photoluminescence, Recombination",

author = "Seo, {Han Kyu} and Ok, {Eun A.} and Kim, {Won Mok} and Park, {Jong Keuk} and Seong, {Tae Yeon} and Lee, {Dong Wha} and Cho, {Hoon Young} and Jeong, {Jeung Hyun}",

note = "Funding Information: This work was supported by the KIST institutional program (Project No. 2E23822 ). The authors also appreciate the financial support from the “Development of 25% efficiency grade tandem CIGS thin film solar cell core technology ( B551179-12-01-00 )” of MOTIE (Ministry of Trade, Industry & Energy) and ISTK (Korea Research Council for Industrial Science and Technology) of Republic of Korea . ",

year = "2013",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2013.05.024",

language = "English",

volume = "546",

pages = "289--293",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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T1 - Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells

AU - Seo, Han Kyu

AU - Ok, Eun A.

AU - Kim, Won Mok

AU - Park, Jong Keuk

AU - Seong, Tae Yeon

AU - Lee, Dong Wha

AU - Cho, Hoon Young

AU - Jeong, Jeung Hyun

N1 - Funding Information: This work was supported by the KIST institutional program (Project No. 2E23822 ). The authors also appreciate the financial support from the “Development of 25% efficiency grade tandem CIGS thin film solar cell core technology ( B551179-12-01-00 )” of MOTIE (Ministry of Trade, Industry & Energy) and ISTK (Korea Research Council for Industrial Science and Technology) of Republic of Korea .

PY - 2013/11/1

Y1 - 2013/11/1

N2 - The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se2 (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I-V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I-V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I-V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process.

AB - The effects of varying the conditions for the chemical bath deposition (CBD) of cadmium sulfide (CdS) layers on CdS/Cu(In,Ga)Se2 (CIGS) hetero-junctions were investigated using photoluminescence (PL), electroluminescence (EL), deep level transient spectroscopy (DLTS), and red-light-illuminated current-voltage (I-V) measurements. We demonstrated that varying CBD-CdS conditions such as the temperature and time influenced the recombination pathways around the CdS/CIGS junction via the formation of different electronic defects, which eventually changed the photovoltaic conversion efficiency. As the CBD-CdS time and temperature were increased, the cell efficiency decreased. PL measurements revealed that this degradation of the cell efficiency was accompanied by increases in the defect-related recombination, which were attributed to the existence of donor defects around CdS/CIGS having an energy level of 0.65 eV below conduction band, as revealed by DLTS. Increasing distortions in the red-light-illuminated I-V characteristics suggested that the related defects might also have played a critical role in metastable changes around the CdS/CIGS junction. Because the CBD-CdS time and temperature were considered to influence the diffusion of impurities into the CIGS surface, the evolution of the efficiency, PL spectra, defect populations, and red-light-illuminated I-V characteristics observed in this work could be attributed to the diffusion of impurities during the CBD-CdS process.

KW - CBD-CdS

KW - CIGS solar cell

KW - DLTS

KW - Metastability

KW - Photoluminescence

KW - Recombination

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