Electrical and optical damage to GAN-based light-emitting diodes by 20-MeV proton irradiation

Gwangseok Yang, Younghun Jung, Byung Jae Kim, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We report the effects of 20-MeV proton irradiation with various fluences (1×1013 and 5×1013 cm-2) on GaNbased blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments.

Original languageEnglish
Pages (from-to)160-163
Number of pages4
JournalScience of Advanced Materials
Issue number1
Publication statusPublished - 2016 Jan 1


  • GaN
  • Light intensity-current voltage characteristics
  • Light-emitting diodes
  • Proton irradiation

ASJC Scopus subject areas

  • Materials Science(all)


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