Electrical and optical damage to GAN-based light-emitting diodes by 20-MeV proton irradiation

Gwangseok Yang; Younghun Jung; Byung Jae Kim; Jihyun Kim

doi:10.1166/sam.2016.2621

Electrical and optical damage to GAN-based light-emitting diodes by 20-MeV proton irradiation

Gwangseok Yang, Younghun Jung, Byung Jae Kim, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the effects of 20-MeV proton irradiation with various fluences (1×10¹³ and 5×10¹³ cm^-2) on GaNbased blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments.

Original language	English
Pages (from-to)	160-163
Number of pages	4
Journal	Science of Advanced Materials
Volume	8
Issue number	1
DOIs	https://doi.org/10.1166/sam.2016.2621
Publication status	Published - 2016 Jan 1

Keywords

GaN
Light intensity-current voltage characteristics
Light-emitting diodes
Proton irradiation

ASJC Scopus subject areas

Materials Science(all)

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10.1166/sam.2016.2621

Cite this

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title = "Electrical and optical damage to GAN-based light-emitting diodes by 20-MeV proton irradiation",

abstract = "We report the effects of 20-MeV proton irradiation with various fluences (1×1013 and 5×1013 cm-2) on GaNbased blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments.",

keywords = "GaN, Light intensity-current voltage characteristics, Light-emitting diodes, Proton irradiation",

author = "Gwangseok Yang and Younghun Jung and Kim, {Byung Jae} and Jihyun Kim",

note = "Funding Information: This research was supported by the Radiation Technology Research and Development program (2013M2A2A6043608) through the National Research Foundation of Korea funded by the Ministry of Science, Information Communication Technology & Future Planning. Publisher Copyright: {\textcopyright} 2016 by American Scientific Publishers. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

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doi = "10.1166/sam.2016.2621",

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T1 - Electrical and optical damage to GAN-based light-emitting diodes by 20-MeV proton irradiation

AU - Yang, Gwangseok

AU - Jung, Younghun

AU - Kim, Byung Jae

AU - Kim, Jihyun

N1 - Funding Information: This research was supported by the Radiation Technology Research and Development program (2013M2A2A6043608) through the National Research Foundation of Korea funded by the Ministry of Science, Information Communication Technology & Future Planning. Publisher Copyright: © 2016 by American Scientific Publishers. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We report the effects of 20-MeV proton irradiation with various fluences (1×1013 and 5×1013 cm-2) on GaNbased blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments.

AB - We report the effects of 20-MeV proton irradiation with various fluences (1×1013 and 5×1013 cm-2) on GaNbased blue light-emitting diodes (LEDs). Effects of fluence on optical and electrical characteristics of GaN LEDs were systematically analyzed by using a combination of experimental results and simulated trajectories. Performance of LEDs, including optical light output and current-voltage characteristics, degraded after irradiation with 20-MeV proton beams with increasing fluence. The GaN-based LEDs' optical performance deteriorated to a greater extent than their electrical performance did. Our results indicate that the proton irradiation generates non-radiative recombination centers within the active regions. This work will be helpful for understanding the degradation mechanisms in hostile environments.

KW - GaN

KW - Light intensity-current voltage characteristics

KW - Light-emitting diodes

KW - Proton irradiation

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Electrical and optical damage to GAN-based light-emitting diodes by 20-MeV proton irradiation

Abstract

Keywords

ASJC Scopus subject areas

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