Electrical and optical properties of GaN films implanted with Mn and Co

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; N. Y. Pashkova; J. Kim; F. Ren; M. E. Overberg; G. T. Thaler; C. R. Abernathy; S. J. Pearton; R. G. Wilson

doi:10.1063/1.1499977

Electrical and optical properties of GaN films implanted with Mn and Co

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. Y. Pashkova, J. Kim, F. Ren, M. E. Overberg, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. G. Wilson

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Optical transmission spectra, microcathodoluminescence spectra, capacitance-voltage and capacitance-frequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of Mn (3×10 ¹⁶ and 4×10¹⁶cm^-2) and Co (4×10¹⁶cm^-2). From optical transmission it was found that Mn forms a deep acceptor near Ev+1.8eV while the Co acceptor is about 0.1 eV deeper. In addition, Mn and Co form complexes with native defects and these complexes are deep electron traps with a level near Ec-0.5eV. Such complexes are most likely responsible for a strong blue luminescence band with energy near 2.9 eV. Adjacent to the implanted region a defect region about 1 μm deep is formed, most likely by out-diffusion of point defects from the implanted zone during the 700°C annealing used to partially remove the radiation damage. This region is characterized by a high density of electron traps at Ec-0.25eV and Ec-0.7eV and hole traps at Ev+0.2eV, Ev+0.35eV and Ev+0.45eV.

Original language	English
Pages (from-to)	3130-3136
Number of pages	7
Journal	Journal of Applied Physics
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.1499977
Publication status	Published - 2002 Sept 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{5b971d7de6d6492096752a77a339fde7,

title = "Electrical and optical properties of GaN films implanted with Mn and Co",

abstract = "Optical transmission spectra, microcathodoluminescence spectra, capacitance-voltage and capacitance-frequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of Mn (3×10 16 and 4×1016cm-2) and Co (4×1016cm-2). From optical transmission it was found that Mn forms a deep acceptor near Ev+1.8eV while the Co acceptor is about 0.1 eV deeper. In addition, Mn and Co form complexes with native defects and these complexes are deep electron traps with a level near Ec-0.5eV. Such complexes are most likely responsible for a strong blue luminescence band with energy near 2.9 eV. Adjacent to the implanted region a defect region about 1 μm deep is formed, most likely by out-diffusion of point defects from the implanted zone during the 700°C annealing used to partially remove the radiation damage. This region is characterized by a high density of electron traps at Ec-0.25eV and Ec-0.7eV and hole traps at Ev+0.2eV, Ev+0.35eV and Ev+0.45eV.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Pashkova, {N. Y.} and J. Kim and F. Ren and Overberg, {M. E.} and Thaler, {G. T.} and Abernathy, {C. R.} and Pearton, {S. J.} and Wilson, {R. G.}",

year = "2002",

month = sep,

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doi = "10.1063/1.1499977",

language = "English",

volume = "92",

pages = "3130--3136",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Electrical and optical properties of GaN films implanted with Mn and Co

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Pashkova, N. Y.

AU - Kim, J.

AU - Ren, F.

AU - Overberg, M. E.

AU - Thaler, G. T.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Wilson, R. G.

PY - 2002/9/15

Y1 - 2002/9/15

N2 - Optical transmission spectra, microcathodoluminescence spectra, capacitance-voltage and capacitance-frequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of Mn (3×10 16 and 4×1016cm-2) and Co (4×1016cm-2). From optical transmission it was found that Mn forms a deep acceptor near Ev+1.8eV while the Co acceptor is about 0.1 eV deeper. In addition, Mn and Co form complexes with native defects and these complexes are deep electron traps with a level near Ec-0.5eV. Such complexes are most likely responsible for a strong blue luminescence band with energy near 2.9 eV. Adjacent to the implanted region a defect region about 1 μm deep is formed, most likely by out-diffusion of point defects from the implanted zone during the 700°C annealing used to partially remove the radiation damage. This region is characterized by a high density of electron traps at Ec-0.25eV and Ec-0.7eV and hole traps at Ev+0.2eV, Ev+0.35eV and Ev+0.45eV.

AB - Optical transmission spectra, microcathodoluminescence spectra, capacitance-voltage and capacitance-frequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of Mn (3×10 16 and 4×1016cm-2) and Co (4×1016cm-2). From optical transmission it was found that Mn forms a deep acceptor near Ev+1.8eV while the Co acceptor is about 0.1 eV deeper. In addition, Mn and Co form complexes with native defects and these complexes are deep electron traps with a level near Ec-0.5eV. Such complexes are most likely responsible for a strong blue luminescence band with energy near 2.9 eV. Adjacent to the implanted region a defect region about 1 μm deep is formed, most likely by out-diffusion of point defects from the implanted zone during the 700°C annealing used to partially remove the radiation damage. This region is characterized by a high density of electron traps at Ec-0.25eV and Ec-0.7eV and hole traps at Ev+0.2eV, Ev+0.35eV and Ev+0.45eV.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Electrical and optical properties of GaN films implanted with Mn and Co

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