We report on the electrical and optical characteristics of a-Si:H/c-Si heterojunction solar cells with point-contact junction via patterned SiO2 layer at the interface. The new structure showed improved electrical properties, having a smaller leakage current and a larger shunt resistance. The electrical conduction of the point-contacted samples followed the diffusion dominant process with bulk recombination, but the control samples without SiO2 showed the space-charge region recombination dominant process. The point-contacted samples showed increased internal quantum efficiency in the bulk region, but decreased internal quantum efficiency in the surface region. As the distance between the holes decreased, the point-contacted solar cells showed an improved efficiency with a larger fill-factor but smaller open-circuit voltage and short-circuit current.
Copyright 2008 Elsevier B.V., All rights reserved.
- Amorphous Si
- Crystalline Si
- Point contact
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films