Electrical and optical properties of point-contacted a-Si:H/c-Si heterojunction solar cells with patterned SiO2 at the interface

Young Woo Ok; Tae Yeon Seong; Donghwan Kim; Sang Kyun Kim; Jeong Chul Lee; Kyung Hoon Yoon; Jinsoo Song

doi:10.1016/j.solmat.2007.04.013

Electrical and optical properties of point-contacted a-Si:H/c-Si heterojunction solar cells with patterned SiO₂ at the interface

Young Woo Ok, Tae Yeon Seong, Donghwan Kim, Sang Kyun Kim, Jeong Chul Lee, Kyung Hoon Yoon, Jinsoo Song

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on the electrical and optical characteristics of a-Si:H/c-Si heterojunction solar cells with point-contact junction via patterned SiO₂ layer at the interface. The new structure showed improved electrical properties, having a smaller leakage current and a larger shunt resistance. The electrical conduction of the point-contacted samples followed the diffusion dominant process with bulk recombination, but the control samples without SiO₂ showed the space-charge region recombination dominant process. The point-contacted samples showed increased internal quantum efficiency in the bulk region, but decreased internal quantum efficiency in the surface region. As the distance between the holes decreased, the point-contacted solar cells showed an improved efficiency with a larger fill-factor but smaller open-circuit voltage and short-circuit current.

Original language	English
Pages (from-to)	1366-1370
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	91
Issue number	14
DOIs	https://doi.org/10.1016/j.solmat.2007.04.013
Publication status	Published - 2007 Sept 6

Bibliographical note

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Amorphous Si
Crystalline Si
Heterojunction
Passivation
Point contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2007.04.013

Cite this

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title = "Electrical and optical properties of point-contacted a-Si:H/c-Si heterojunction solar cells with patterned SiO2 at the interface",

abstract = "We report on the electrical and optical characteristics of a-Si:H/c-Si heterojunction solar cells with point-contact junction via patterned SiO2 layer at the interface. The new structure showed improved electrical properties, having a smaller leakage current and a larger shunt resistance. The electrical conduction of the point-contacted samples followed the diffusion dominant process with bulk recombination, but the control samples without SiO2 showed the space-charge region recombination dominant process. The point-contacted samples showed increased internal quantum efficiency in the bulk region, but decreased internal quantum efficiency in the surface region. As the distance between the holes decreased, the point-contacted solar cells showed an improved efficiency with a larger fill-factor but smaller open-circuit voltage and short-circuit current.",

keywords = "Amorphous Si, Crystalline Si, Heterojunction, Passivation, Point contact",

author = "Ok, {Young Woo} and Seong, {Tae Yeon} and Donghwan Kim and Kim, {Sang Kyun} and Lee, {Jeong Chul} and Yoon, {Kyung Hoon} and Jinsoo Song",

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AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Kim, Donghwan

AU - Kim, Sang Kyun

AU - Lee, Jeong Chul

AU - Yoon, Kyung Hoon

AU - Song, Jinsoo

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AB - We report on the electrical and optical characteristics of a-Si:H/c-Si heterojunction solar cells with point-contact junction via patterned SiO2 layer at the interface. The new structure showed improved electrical properties, having a smaller leakage current and a larger shunt resistance. The electrical conduction of the point-contacted samples followed the diffusion dominant process with bulk recombination, but the control samples without SiO2 showed the space-charge region recombination dominant process. The point-contacted samples showed increased internal quantum efficiency in the bulk region, but decreased internal quantum efficiency in the surface region. As the distance between the holes decreased, the point-contacted solar cells showed an improved efficiency with a larger fill-factor but smaller open-circuit voltage and short-circuit current.

KW - Amorphous Si

KW - Crystalline Si

KW - Heterojunction

KW - Passivation

KW - Point contact

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