Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

Younghun Jung; Michael Mastro; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1016/j.tsf.2009.11.069

Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

Younghun Jung, Michael Mastro, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Letter › peer-review

9 Citations (Scopus)

Abstract

A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.

Original language	English
Pages (from-to)	1747-1750
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	6
DOIs	https://doi.org/10.1016/j.tsf.2009.11.069
Publication status	Published - 2010 Jan 1

Keywords

Gallium nitride
Metal-organic chemical vapor deposition
Non-polar structure
Scanning electron microscopy
Schottky contact
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.11.069

Cite this

@article{a3af0b6a836e489db84e1e928d412a1f,

title = "Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures",

abstract = "A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.",

keywords = "Gallium nitride, Metal-organic chemical vapor deposition, Non-polar structure, Scanning electron microscopy, Schottky contact, X-ray diffraction",

author = "Younghun Jung and Michael Mastro and Jennifer Hite and Eddy, {Charles R.} and Jihyun Kim",

note = "Funding Information: Research at the Naval Research Lab is partially supported by the Office of Naval Research and Office of Naval Research — Global ( 62909-09-1-4060 ). Research at Korea University was supported by BK21 program.",

year = "2010",

month = jan,

day = "1",

doi = "10.1016/j.tsf.2009.11.069",

language = "English",

volume = "518",

pages = "1747--1750",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

AU - Jung, Younghun

AU - Mastro, Michael

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Jihyun

N1 - Funding Information: Research at the Naval Research Lab is partially supported by the Office of Naval Research and Office of Naval Research — Global ( 62909-09-1-4060 ). Research at Korea University was supported by BK21 program.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.

AB - A non-polar AlGaN/GaN structure is a strong candidate for the high-voltage device that can operate in enhancement-mode compared to the depletion-mode operation that is practically unavoidable for a standard polar AlGaN/GaN structure. Growth of non-polar GaN is non-trivial and a two-step nucleation scheme was developed to produce high-quality non-polar a-plane AlGaN/GaN structures on r-plane sapphire. The anisotropic nature of non-polar GaN requires a modification to a typical polar GaN-based transistor fabrication process. A KOH wet etch proceeded by a dramatically different mechanism compared to the standard polar c-face AlGaN/GaN structure. This device with Pt/Au Schottky gate displayed a barrier height of 0.76 eV and an ideality factor of 4 at 20 °C.

KW - Gallium nitride

KW - Metal-organic chemical vapor deposition

KW - Non-polar structure

KW - Scanning electron microscopy

KW - Schottky contact

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=73449148732&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.11.069

DO - 10.1016/j.tsf.2009.11.069

M3 - Letter

AN - SCOPUS:73449148732

SN - 0040-6090

VL - 518

SP - 1747

EP - 1750

JO - Thin Solid Films

JF - Thin Solid Films

IS - 6

ER -

Electrical and structural characterizations of non-polar AlGaN/GaN heterostructures

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this