Electrical and structural properties of W ohmic contacts to InGaN

Han Ki Kim; Ja Soon Jang; Seong Ju Park; Tae Yeon Seong

doi:10.1149/1.1393396

Electrical and structural properties of W ohmic contacts to InGaN

Han Ki Kim, Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Low-resistance ohmic contacts to the Si-doped In_0.17Ga_0.83N (n_d = 1.63 × 10¹⁹ cm^-3) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950°C for 90 s results in a specific contact resistance of 2.7 × 10^-8 Ω cm². X-ray diffraction results show that a β-W₂N phase is formed at the interface between the W and InGaN when annealed at temperatures >500°C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.

Original language	English
Pages (from-to)	1573-1576
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	4
DOIs	https://doi.org/10.1149/1.1393396
Publication status	Published - 2000 Apr
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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@article{9ec9146e07db40faac772bb3ecf10662,

title = "Electrical and structural properties of W ohmic contacts to InGaN",

abstract = "Low-resistance ohmic contacts to the Si-doped In0.17Ga0.83N (nd = 1.63 × 1019 cm-3) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950°C for 90 s results in a specific contact resistance of 2.7 × 10-8 Ω cm2. X-ray diffraction results show that a β-W2N phase is formed at the interface between the W and InGaN when annealed at temperatures >500°C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.",

author = "Kim, {Han Ki} and Jang, {Ja Soon} and Park, {Seong Ju} and Seong, {Tae Yeon}",

year = "2000",

month = apr,

doi = "10.1149/1.1393396",

language = "English",

volume = "147",

pages = "1573--1576",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Electrical and structural properties of W ohmic contacts to InGaN

AU - Kim, Han Ki

AU - Jang, Ja Soon

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2000/4

Y1 - 2000/4

N2 - Low-resistance ohmic contacts to the Si-doped In0.17Ga0.83N (nd = 1.63 × 1019 cm-3) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950°C for 90 s results in a specific contact resistance of 2.7 × 10-8 Ω cm2. X-ray diffraction results show that a β-W2N phase is formed at the interface between the W and InGaN when annealed at temperatures >500°C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.

AB - Low-resistance ohmic contacts to the Si-doped In0.17Ga0.83N (nd = 1.63 × 1019 cm-3) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950°C for 90 s results in a specific contact resistance of 2.7 × 10-8 Ω cm2. X-ray diffraction results show that a β-W2N phase is formed at the interface between the W and InGaN when annealed at temperatures >500°C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.

UR - http://www.scopus.com/inward/record.url?scp=0033741322&partnerID=8YFLogxK

U2 - 10.1149/1.1393396

DO - 10.1149/1.1393396

M3 - Article

AN - SCOPUS:0033741322

SN - 0013-4651

VL - 147

SP - 1573

EP - 1576

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 4

ER -

Electrical and structural properties of W ohmic contacts to InGaN

Abstract

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