Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions

Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2 mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT.

Original languageEnglish
Article number093502
JournalApplied Physics Letters
Volume110
Issue number9
DOIs
Publication statusPublished - 2017 Feb 27

Bibliographical note

Funding Information:
This work was supported in part by the Mid-career Researcher Program (Nos. NRF-2013R1A2A1A03070750, NRF-2015R1A2A1A15055437, and NRF-2016R1E1A1A02920171) and the Basic Science Research Program (No. NRF-2015R1D1A1A01057641) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology, Samsung Display Co. Ltd., the Brain Korea 21 Plus Project, and the Korea University Grant.

Publisher Copyright:
© 2017 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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