Electrical characteristics of all polymer based thin film transistor using poly (3,4-ethylenedioxythiophene) and polypyrrole

H. S. Kang, H. S. Kang, J. Joo, M. S. Lee, M. S. Kim, J. Y. Lee, A. J. Epstein

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report the electrical characteristics of all polymer based thin film transistor (TFT). Conducting poly (3,4-ethylenediorythiophene) (PEDOT) and polypyrole (PPy) were used for gate electrode and active layer, which were made by photolithographic micro-patterning. Polyvinyle cinnamate and epoxy were used for insulating layer through spin coating. from the current (I)-voltage (V) characteristics of all polymer based TFTs, the source-drain current (I ds) of the devices dramatically decreased with increasing positive gate bias (Vg), indicating p-type TFT. We analyze these relults based on the "bottle-neck" effect, which implies the distinct deplation mode of the field effect region on the gate electrode with positive Vg. With negative Vg, the Ids of the devices weakly increses. Depending on the channel length between the contacts of source and drain electrodes, the on-off current ratio (Ion/Ioff) was changed.

Original languageEnglish
Pages (from-to)203-208
Number of pages6
JournalMolecular Crystals and Liquid Crystals
Volume424
DOIs
Publication statusPublished - 2004

Bibliographical note

Funding Information:
Received 1 October 2003; accepted 14 December 2003. This work was supported from Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Address correspondence to J. Joo, Department of Physics, Korea University, Seoul 136-701, Korea. Tel.: 82-2-3920-3533, Fax: 82-2-927-3292, E-mail: jjoo@korea.ac.kr

Keywords

  • Poly (3,4-ethylenedioxythioiphene)
  • Polypyrrole
  • Thin film transistor (TFT)

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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