Electrical characteristics of all polymer based thin film transistor using poly (3,4-ethylenedioxythiophene) and polypyrrole

H. S. Kang; H. S. Kang; J. Joo; M. S. Lee; M. S. Kim; J. Y. Lee; A. J. Epstein

doi:10.1080/15421400490506180

Electrical characteristics of all polymer based thin film transistor using poly (3,4-ethylenedioxythiophene) and polypyrrole

H. S. Kang, H. S. Kang, J. Joo, M. S. Lee, M. S. Kim, J. Y. Lee, A. J. Epstein

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the electrical characteristics of all polymer based thin film transistor (TFT). Conducting poly (3,4-ethylenediorythiophene) (PEDOT) and polypyrole (PPy) were used for gate electrode and active layer, which were made by photolithographic micro-patterning. Polyvinyle cinnamate and epoxy were used for insulating layer through spin coating. from the current (I)-voltage (V) characteristics of all polymer based TFTs, the source-drain current (I _ds) of the devices dramatically decreased with increasing positive gate bias (V_g), indicating p-type TFT. We analyze these relults based on the "bottle-neck" effect, which implies the distinct deplation mode of the field effect region on the gate electrode with positive V_g. With negative V_g, the I_ds of the devices weakly increses. Depending on the channel length between the contacts of source and drain electrodes, the on-off current ratio (I_on/I_off) was changed.

Original language	English
Pages (from-to)	203-208
Number of pages	6
Journal	Molecular Crystals and Liquid Crystals
Volume	424
DOIs	https://doi.org/10.1080/15421400490506180
Publication status	Published - 2004

Keywords

Poly (3,4-ethylenedioxythioiphene)
Polypyrrole
Thin film transistor (TFT)

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/15421400490506180

Cite this

@article{88b7f3d0ed2a492e9877348c3ffc24f3,

title = "Electrical characteristics of all polymer based thin film transistor using poly (3,4-ethylenedioxythiophene) and polypyrrole",

abstract = "We report the electrical characteristics of all polymer based thin film transistor (TFT). Conducting poly (3,4-ethylenediorythiophene) (PEDOT) and polypyrole (PPy) were used for gate electrode and active layer, which were made by photolithographic micro-patterning. Polyvinyle cinnamate and epoxy were used for insulating layer through spin coating. from the current (I)-voltage (V) characteristics of all polymer based TFTs, the source-drain current (I ds) of the devices dramatically decreased with increasing positive gate bias (Vg), indicating p-type TFT. We analyze these relults based on the {"}bottle-neck{"} effect, which implies the distinct deplation mode of the field effect region on the gate electrode with positive Vg. With negative Vg, the Ids of the devices weakly increses. Depending on the channel length between the contacts of source and drain electrodes, the on-off current ratio (Ion/Ioff) was changed.",

keywords = "Poly (3,4-ethylenedioxythioiphene), Polypyrrole, Thin film transistor (TFT)",

author = "Kang, {H. S.} and Kang, {H. S.} and J. Joo and Lee, {M. S.} and Kim, {M. S.} and Lee, {J. Y.} and Epstein, {A. J.}",

note = "Funding Information: Received 1 October 2003; accepted 14 December 2003. This work was supported from Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Address correspondence to J. Joo, Department of Physics, Korea University, Seoul 136-701, Korea. Tel.: 82-2-3920-3533, Fax: 82-2-927-3292, E-mail: jjoo@korea.ac.kr",

year = "2004",

doi = "10.1080/15421400490506180",

language = "English",

volume = "424",

pages = "203--208",

journal = "Molecular Crystals and Liquid Crystals",

issn = "1542-1406",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Electrical characteristics of all polymer based thin film transistor using poly (3,4-ethylenedioxythiophene) and polypyrrole

AU - Kang, H. S.

AU - Joo, J.

AU - Lee, M. S.

AU - Kim, M. S.

AU - Lee, J. Y.

AU - Epstein, A. J.

N1 - Funding Information: Received 1 October 2003; accepted 14 December 2003. This work was supported from Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology of Korea. Address correspondence to J. Joo, Department of Physics, Korea University, Seoul 136-701, Korea. Tel.: 82-2-3920-3533, Fax: 82-2-927-3292, E-mail: jjoo@korea.ac.kr

PY - 2004

Y1 - 2004

N2 - We report the electrical characteristics of all polymer based thin film transistor (TFT). Conducting poly (3,4-ethylenediorythiophene) (PEDOT) and polypyrole (PPy) were used for gate electrode and active layer, which were made by photolithographic micro-patterning. Polyvinyle cinnamate and epoxy were used for insulating layer through spin coating. from the current (I)-voltage (V) characteristics of all polymer based TFTs, the source-drain current (I ds) of the devices dramatically decreased with increasing positive gate bias (Vg), indicating p-type TFT. We analyze these relults based on the "bottle-neck" effect, which implies the distinct deplation mode of the field effect region on the gate electrode with positive Vg. With negative Vg, the Ids of the devices weakly increses. Depending on the channel length between the contacts of source and drain electrodes, the on-off current ratio (Ion/Ioff) was changed.

AB - We report the electrical characteristics of all polymer based thin film transistor (TFT). Conducting poly (3,4-ethylenediorythiophene) (PEDOT) and polypyrole (PPy) were used for gate electrode and active layer, which were made by photolithographic micro-patterning. Polyvinyle cinnamate and epoxy were used for insulating layer through spin coating. from the current (I)-voltage (V) characteristics of all polymer based TFTs, the source-drain current (I ds) of the devices dramatically decreased with increasing positive gate bias (Vg), indicating p-type TFT. We analyze these relults based on the "bottle-neck" effect, which implies the distinct deplation mode of the field effect region on the gate electrode with positive Vg. With negative Vg, the Ids of the devices weakly increses. Depending on the channel length between the contacts of source and drain electrodes, the on-off current ratio (Ion/Ioff) was changed.

KW - Poly (3,4-ethylenedioxythioiphene)

KW - Polypyrrole

KW - Thin film transistor (TFT)

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DO - 10.1080/15421400490506180

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JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

ER -

Electrical characteristics of all polymer based thin film transistor using poly (3,4-ethylenedioxythiophene) and polypyrrole

Abstract

Keywords

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