Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress

D. Kim, K. Cho, S. Woo, S. Kim

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    In this Letter, the authors investigate the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) under positive gate bias stress (PBS). An as-prepared a-ITGZO TFT exhibits a mobility of 26.05 cm2/V s, subthreshold swing of 183 mV, threshold voltage of -0.33 V, and on/off ratio of 1.34 × 108. These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor-like conduction band-tail states and donor-like Gaussian states within the bandgap of the a-ITGZO channel material.

    Original languageEnglish
    Pages (from-to)102-104
    Number of pages3
    JournalElectronics Letters
    Volume56
    Issue number2
    DOIs
    Publication statusPublished - 2020 Jan 23

    Bibliographical note

    Publisher Copyright:
    © The Institution of Engineering and Technology 2020.

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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