Abstract
In this Letter, the authors investigate the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) under positive gate bias stress (PBS). An as-prepared a-ITGZO TFT exhibits a mobility of 26.05 cm2/V s, subthreshold swing of 183 mV, threshold voltage of -0.33 V, and on/off ratio of 1.34 × 108. These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor-like conduction band-tail states and donor-like Gaussian states within the bandgap of the a-ITGZO channel material.
| Original language | English |
|---|---|
| Pages (from-to) | 102-104 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 56 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2020 Jan 23 |
Bibliographical note
Publisher Copyright:© The Institution of Engineering and Technology 2020.
ASJC Scopus subject areas
- Electrical and Electronic Engineering