TY - JOUR
T1 - Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure
AU - Oh, Hyungon
AU - Cho, Kyoungah
AU - Park, Sukhyung
AU - Kim, Sangsig
N1 - Funding Information:
This work was supported in part by the Mid-career Researcher Program (no. NRF-2013R1A2A1A03070750 , NRF-2015R1A2A1A15055437 ), grant funded by the Korean Government (MSIP) (no. NRF-2015R1A5A7037674 ) and Basic Science Research Program (no. NRF-2015R101A1A01057641 ) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology , the Brain Korea 21 Plus Project in 2015, and a grant from Samsung Display Co. Ltd .
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2016/6/15
Y1 - 2016/6/15
N2 - In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.
AB - In this study, we fabricate top-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with five split channels on a bendable plastic substrate and investigate the electrical characteristics as a function of bending curvature radius. Owing to the channel width splitting effect, our TFTs have outstanding characteristics including a high mobility of 71.8 cm2/V·s and an on/off ratio of 108. Our bending study reveals that the operation regions of our TFT are categorized into safe, transition, and definitive mechanical failure regions as the value of the bending curvature radius decreases. In the transition region, the threshold voltage is shifted from 1.0 to 2.1 V, and the mobility is decreased from 71.8 to 25.9 cm2/V·s. The electrical failure of bendable TFTs results from microcracks induced by mechanical strain.
KW - Bending curvature radius
KW - Plastic substrate
KW - Split channel
KW - Thin-film transistor
KW - a-IGZO
UR - http://www.scopus.com/inward/record.url?scp=84962632408&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2016.03.044
DO - 10.1016/j.mee.2016.03.044
M3 - Article
AN - SCOPUS:84962632408
SN - 0167-9317
VL - 159
SP - 179
EP - 183
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -