Abstract
In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n-type behavior and operates with a mobility of 34.32 cm2 V-1 s-1, threshold voltage of -0.71 V, subthreshold swing of 169 mV, and on/off ratio of 2 × 107. The a-ITGZO TFT operates stably even under a bending radius of 2 mm, regardless of the upward or downward bending. The thickness of the thin CPI substrate contributes to the stable operation of the bent TFT.
Original language | English |
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Article number | 065014 |
Journal | Semiconductor Science and Technology |
Volume | 35 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2020 Jun |
Bibliographical note
Publisher Copyright:© 2020 IOP Publishing Ltd.
Keywords
- amorphous indium tin gallium zinc oxide
- bendable oxide thin-film transistors
- bending radius
- colorless polyimide
- compressive stress
- tensile stress
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry