Abstract
We characterized the electrical and chemical properties of Cu-doped In 2O 3(CIO) (2.5 nm thick)/Sb-doped SnO 2(ATO) (250 nm thick) contacts to p-type GaN by means of current-voltage measurement, scanning transmission electron microscope (STEM) and x-ray photoemission spectroscopy (XPS). The CIO/ATO contacts show ohmic behaviors, when annealed at 530 and 630°C. The effective Schottky barrier heights on diodes made with Ni (5 nm)/Au (5 nm) contacts decrease with increasing annealing temperature. STEM/energy dispersive x-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-Cu-oxide. XPS results show a shift of the surface Fermi level toward the lower binding energy side upon annealing. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed.
Original language | English |
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Pages (from-to) | 109-113 |
Number of pages | 5 |
Journal | Journal of Electroceramics |
Volume | 27 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 2011 Dec |
Bibliographical note
Funding Information:Acknowledgments This work was supported by Manpower Development Program for Energy & Resources (MKE)(Grant no. 2008-E-AP-HM-P-16-0000), National Research Foundation of Korea grant through World Class University program (R33-2008-000-10025-0), and the Industrial Technology Development Program funded by the MKE, Korea.
Keywords
- Light emitting diode
- Ohmic contact
- SnO
- Transparent electrode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Electrical and Electronic Engineering
- Materials Chemistry