Abstract
In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.
Original language | English |
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Article number | 090903 |
Journal | Japanese journal of applied physics |
Volume | 60 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2021 Sept |
Bibliographical note
Publisher Copyright:© 2021 The Japan Society of Applied Physics.
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)