Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

Hosang Lee; Kyoungah Cho; Heesung Kong; Seungjun Lee; Junhyung Lim; Sangsig Kim

doi:10.35848/1347-4065/ac1c8d

Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

Hosang Lee, Kyoungah Cho, Heesung Kong, Seungjun Lee, Junhyung Lim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.

Original language	English
Article number	090903
Journal	Japanese journal of applied physics
Volume	60
Issue number	9
DOIs	https://doi.org/10.35848/1347-4065/ac1c8d
Publication status	Published - 2021 Sept

Bibliographical note

Publisher Copyright:
© 2021 The Japan Society of Applied Physics.

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.",

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AU - Lee, Seungjun

AU - Lim, Junhyung

AU - Kim, Sangsig

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AB - In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.

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Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

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