Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress

Hosang Lee, Kyoungah Cho, Heesung Kong, Seungjun Lee, Junhyung Lim, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.

    Original languageEnglish
    Article number090903
    JournalJapanese journal of applied physics
    Volume60
    Issue number9
    DOIs
    Publication statusPublished - 2021 Sept

    Bibliographical note

    Publisher Copyright:
    © 2021 The Japan Society of Applied Physics.

    ASJC Scopus subject areas

    • General Engineering
    • General Physics and Astronomy

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