Abstract
In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 105 times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (NGA) related with the generation of oxygen interstitial defects.
| Original language | English |
|---|---|
| Article number | 090903 |
| Journal | Japanese journal of applied physics |
| Volume | 60 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2021 Sept |
Bibliographical note
Publisher Copyright:© 2021 The Japan Society of Applied Physics.
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy
Fingerprint
Dive into the research topics of 'Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS