Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress
- Hosang Lee
- , Kyoungah Cho
- , Heesung Kong
- , Seungjun Lee
- , Junhyung Lim
- , Sangsig Kim
Research output: Contribution to journal › Article › peer-review
5
Link opens in a new tab
Citations
(Scopus)