Keyphrases
Gate Oxide
100%
Memory Device
100%
Electrical Characteristics
100%
Titanium Dioxide Nanoparticles
100%
Floating Gate Memory
100%
Voltage Curve
42%
Metal-oxide-semiconductor Capacitor (MOSCAP)
42%
Flat-band Voltage
28%
MOSFET
28%
Capacitance-voltage
28%
Embedded Metal
28%
Annealing Process
14%
Si Substrate
14%
Rutile
14%
3-layer
14%
Oxide Layer
14%
Thermal Annealing
14%
Drain-source Current
14%
Gate Voltage
14%
Threshold Voltage Shift
14%
Floating Gate
14%
Charge Storage
14%
Hysteresis Band
14%
Tunnel Oxide
14%
Large Flat
14%
P-type Si
14%
Thermal Deposition
14%
Tunneling Control
14%
Erase Time
14%
Material Science
Oxide Compound
100%
Nanoparticle
100%
Electrical Property
100%
Titanium
100%
Oxide Semiconductor
37%
Metal Oxide
37%
Capacitor
37%
Capacitance
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Annealing
12%
Engineering
Gate Oxide
100%
Nanoparticle
100%
Floating Gate
100%
Metal Oxide Semiconductor
42%
Metal-Oxide-Semiconductor Field-Effect Transistor
28%
Si Substrate
14%
Tunnel Construction
14%
Current Drain
14%
Oxide Layer
14%
Gate Voltage
14%
Charge Storage
14%