TY - JOUR
T1 - Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics
AU - Yoon, Changjoon
AU - Cho, Gyoujin
AU - Kim, Sangsig
N1 - Funding Information:
Manuscript received September 29, 2010; revised December 3, 2010; accepted January 13, 2011. Date of current version March 23, 2011. This work was supported in part by the Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology Information Technology R&D Program under Grant 10030559 (Development of Next Generation High Performance Organic/Nano Materials and Printing Process Technology), by the Ministry of Commerce, Industry and Energy Medium-Term Strategic Technology Development Program, by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the Ministry of Education, Science and Technology Korea Science and Engineering Foundation World Class University Project under Grant R32-2008-000-10082-0, and by the Hynix–Korea University Nano-Semiconductor Program. The review of this paper was arranged by Editor A. C. Seabaugh.
PY - 2011/4
Y1 - 2011/4
N2 - GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.
AB - GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.
KW - Flexible electronics
KW - GaAs
KW - metalsemiconductor field-effect transistors (MESFET)
KW - nanowire (NW)
UR - http://www.scopus.com/inward/record.url?scp=79953094112&partnerID=8YFLogxK
U2 - 10.1109/TED.2011.2107518
DO - 10.1109/TED.2011.2107518
M3 - Article
AN - SCOPUS:79953094112
SN - 0018-9383
VL - 58
SP - 1096
EP - 1101
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 4
M1 - 5732676
ER -