Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application

Samjong Choi, Young Soo Park, Kyoo Chul Cho, Tae Soo Kang, Tae Sung Kim, Byoungjun Park, Kyoungah Cho, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Germanium nanocrystals (NCs)-embedded silicon dioxide (SiO2) layers on top of Si substrates were prepared using the implantation of 74Ge+ ions into the SiO2 layers and the annealing of the implanted oxide layers. The distribution of Ge NCs embedded inside the SiO2 layers was examined by high resolution transmission electron microscopy, and optical properties of the embedded NCs were characterized by photoluminescence and micro-Raman spectroscopy. Capacitance versus voltage (C-V) measurements of Ge NCs-embedded MOS capacitors with single Al2O3 capping layers were performed in order to study memory characteristics of these MOS capacitors. The C-V curves exhibit large threshold voltage shifts originating from charging effect of the Ge NCs, revealing the possibility that the MOS structure is applicable to Nano Floating Gate Memory (NFGM) devices. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publicationNew Materials, Processes, and Equipment
PublisherElectrochemical Society Inc.
Pages449-455
Number of pages7
Edition2
ISBN (Electronic)1566775027
DOIs
Publication statusPublished - 2006
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Publication series

NameECS Transactions
Number2
Volume3
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting
Country/TerritoryMexico
CityCancun
Period06/10/2906/11/3

ASJC Scopus subject areas

  • General Engineering

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