Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application

Samjong Choi; Young Soo Park; Kyoo Chul Cho; Tae Soo Kang; Tae Sung Kim; Byoungjun Park; Kyoungah Cho; Sangsig Kim

doi:10.1149/1.2356304

Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application

Samjong Choi, Young Soo Park, Kyoo Chul Cho, Tae Soo Kang, Tae Sung Kim, Byoungjun Park, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Germanium nanocrystals (NCs)-embedded silicon dioxide (SiO₂) layers on top of Si substrates were prepared using the implantation of ⁷⁴Ge⁺ ions into the SiO₂ layers and the annealing of the implanted oxide layers. The distribution of Ge NCs embedded inside the SiO₂ layers was examined by high resolution transmission electron microscopy, and optical properties of the embedded NCs were characterized by photoluminescence and micro-Raman spectroscopy. Capacitance versus voltage (C-V) measurements of Ge NCs-embedded MOS capacitors with single Al₂O₃ capping layers were performed in order to study memory characteristics of these MOS capacitors. The C-V curves exhibit large threshold voltage shifts originating from charging effect of the Ge NCs, revealing the possibility that the MOS structure is applicable to Nano Floating Gate Memory (NFGM) devices. copyright The Electrochemical Society.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	449-455
Number of pages	7
Edition	2
ISBN (Electronic)	1566775027
DOIs	https://doi.org/10.1149/1.2356304
Publication status	Published - 2006
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	2
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2356304

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Choi, S., Park, Y. S., Cho, K. C., Kang, T. S., Kim, T. S., Park, B., Cho, K., & Kim, S. (2006). Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (2 ed., pp. 449-455). (ECS Transactions; Vol. 3, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2356304

Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. / Choi, Samjong; Park, Young Soo; Cho, Kyoo Chul et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2. ed. Electrochemical Society Inc., 2006. p. 449-455 (ECS Transactions; Vol. 3, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Choi, S, Park, YS, Cho, KC, Kang, TS, Kim, TS, Park, B, Cho, K & Kim, S 2006, Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2 edn, ECS Transactions, no. 2, vol. 3, Electrochemical Society Inc., pp. 449-455, Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2356304

Choi S, Park YS, Cho KC, Kang TS, Kim TS, Park B et al. Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2 ed. Electrochemical Society Inc. 2006. p. 449-455. (ECS Transactions; 2). doi: 10.1149/1.2356304

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title = "Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application",

abstract = "Germanium nanocrystals (NCs)-embedded silicon dioxide (SiO2) layers on top of Si substrates were prepared using the implantation of 74Ge+ ions into the SiO2 layers and the annealing of the implanted oxide layers. The distribution of Ge NCs embedded inside the SiO2 layers was examined by high resolution transmission electron microscopy, and optical properties of the embedded NCs were characterized by photoluminescence and micro-Raman spectroscopy. Capacitance versus voltage (C-V) measurements of Ge NCs-embedded MOS capacitors with single Al2O3 capping layers were performed in order to study memory characteristics of these MOS capacitors. The C-V curves exhibit large threshold voltage shifts originating from charging effect of the Ge NCs, revealing the possibility that the MOS structure is applicable to Nano Floating Gate Memory (NFGM) devices. copyright The Electrochemical Society.",

author = "Samjong Choi and Park, {Young Soo} and Cho, {Kyoo Chul} and Kang, {Tae Soo} and Kim, {Tae Sung} and Byoungjun Park and Kyoungah Cho and Sangsig Kim",

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AU - Park, Byoungjun

AU - Cho, Kyoungah

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N2 - Germanium nanocrystals (NCs)-embedded silicon dioxide (SiO2) layers on top of Si substrates were prepared using the implantation of 74Ge+ ions into the SiO2 layers and the annealing of the implanted oxide layers. The distribution of Ge NCs embedded inside the SiO2 layers was examined by high resolution transmission electron microscopy, and optical properties of the embedded NCs were characterized by photoluminescence and micro-Raman spectroscopy. Capacitance versus voltage (C-V) measurements of Ge NCs-embedded MOS capacitors with single Al2O3 capping layers were performed in order to study memory characteristics of these MOS capacitors. The C-V curves exhibit large threshold voltage shifts originating from charging effect of the Ge NCs, revealing the possibility that the MOS structure is applicable to Nano Floating Gate Memory (NFGM) devices. copyright The Electrochemical Society.

AB - Germanium nanocrystals (NCs)-embedded silicon dioxide (SiO2) layers on top of Si substrates were prepared using the implantation of 74Ge+ ions into the SiO2 layers and the annealing of the implanted oxide layers. The distribution of Ge NCs embedded inside the SiO2 layers was examined by high resolution transmission electron microscopy, and optical properties of the embedded NCs were characterized by photoluminescence and micro-Raman spectroscopy. Capacitance versus voltage (C-V) measurements of Ge NCs-embedded MOS capacitors with single Al2O3 capping layers were performed in order to study memory characteristics of these MOS capacitors. The C-V curves exhibit large threshold voltage shifts originating from charging effect of the Ge NCs, revealing the possibility that the MOS structure is applicable to Nano Floating Gate Memory (NFGM) devices. copyright The Electrochemical Society.

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ER -

Electrical characteristics of Ge-nano-crystal embedded MOS capacitors for non-volatile-memory application

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