Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

Original languageEnglish
Pages (from-to)878-882
Number of pages5
JournalOrganic Electronics
Issue number5
Publication statusPublished - 2008 Oct

Bibliographical note

Funding Information:
This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)) and the nano R&D program (M10703000980-07M0300-98010).


  • Gold
  • MIS capacitors
  • Nanoparticles
  • Polymer insulators

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Biomaterials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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