Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

Byoungjun Park; Ki Ju Im; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.orgel.2008.06.010

Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

Original language	English
Pages (from-to)	878-882
Number of pages	5
Journal	Organic Electronics
Volume	9
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2008.06.010
Publication status	Published - 2008 Oct

Bibliographical note

Funding Information:
This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)) and the nano R&D program (M10703000980-07M0300-98010).

Keywords

Gold
MIS capacitors
Nanoparticles
Polymer insulators

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.orgel.2008.06.010

Cite this

@article{5997ee92be80412b93981ad03c4bf49d,

title = "Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric",

abstract = "Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.",

keywords = "Gold, MIS capacitors, Nanoparticles, Polymer insulators",

author = "Byoungjun Park and Im, {Ki Ju} and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)) and the nano R&D program (M10703000980-07M0300-98010).",

year = "2008",

month = oct,

doi = "10.1016/j.orgel.2008.06.010",

language = "English",

volume = "9",

pages = "878--882",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "5",

}

TY - JOUR

T1 - Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

AU - Park, Byoungjun

AU - Im, Ki Ju

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)) and the nano R&D program (M10703000980-07M0300-98010).

PY - 2008/10

Y1 - 2008/10

N2 - Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

AB - Memory characteristics of gold nanoparticle-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene-C) gate insulating material are investigated in this study. The gold nanoparticles used in this work were synthesized by the colloidal method. Current density versus voltage curves obtained from the MIS capacitors exhibit better performance for the parylene-C gate insulator, compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. In addition, the charge retention characteristic for the gold nanoparticle-embedded MIS capacitor is described in this paper.

KW - Gold

KW - MIS capacitors

KW - Nanoparticles

KW - Polymer insulators

UR - http://www.scopus.com/inward/record.url?scp=49049107700&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2008.06.010

DO - 10.1016/j.orgel.2008.06.010

M3 - Article

AN - SCOPUS:49049107700

SN - 1566-1199

VL - 9

SP - 878

EP - 882

JO - Organic Electronics

JF - Organic Electronics

IS - 5

ER -

Electrical characteristics of gold nanoparticle-embedded MIS capacitors with parylene gate dielectric

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this