Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates

Dong Won Kim; Jaewon Jang; Hyunsuk Kim; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.tsf.2008.04.044

Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates

Dong Won Kim, Jaewon Jang, Hyunsuk Kim, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al₂O₃ buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm²/V{bullet operator}s and an on/off current ratio of ~ 1 × 10³.

Original language	English
Pages (from-to)	7715-7719
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	21
DOIs	https://doi.org/10.1016/j.tsf.2008.04.044
Publication status	Published - 2008 Sept 1

Keywords

Aluminum oxide
Hydrophilicity
Mercury telluride
Nanocrystals
Polymer substrate
Thin film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.04.044

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@article{39228ca3eb854c25abdf1bf8b7bfd2ca,

title = "Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates",

abstract = "HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V{bullet operator}s and an on/off current ratio of ~ 1 × 103.",

keywords = "Aluminum oxide, Hydrophilicity, Mercury telluride, Nanocrystals, Polymer substrate, Thin film transistor",

author = "Kim, {Dong Won} and Jaewon Jang and Hyunsuk Kim and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Nano R&D Program (M10703000980-07M0300-98010).",

year = "2008",

month = sep,

day = "1",

doi = "10.1016/j.tsf.2008.04.044",

language = "English",

volume = "516",

pages = "7715--7719",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "21",

}

TY - JOUR

T1 - Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates

AU - Kim, Dong Won

AU - Jang, Jaewon

AU - Kim, Hyunsuk

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), the Nano R&D Program (M10703000980-07M0300-98010).

PY - 2008/9/1

Y1 - 2008/9/1

N2 - HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V{bullet operator}s and an on/off current ratio of ~ 1 × 103.

AB - HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of ~ 1.20 cm2/V{bullet operator}s and an on/off current ratio of ~ 1 × 103.

KW - Aluminum oxide

KW - Hydrophilicity

KW - Mercury telluride

KW - Nanocrystals

KW - Polymer substrate

KW - Thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=49349092278&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.04.044

DO - 10.1016/j.tsf.2008.04.044

M3 - Article

AN - SCOPUS:49349092278

SN - 0040-6090

VL - 516

SP - 7715

EP - 7719

JO - Thin Solid Films

JF - Thin Solid Films

IS - 21

ER -

Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates

Abstract

Keywords

ASJC Scopus subject areas

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