Electrical characteristics of hybrid nanoparticle nanowire devices

Dong Young Jeong; Kihyun Keem; Byoungjun Park; Kyoungah Cho; Sangsig Kim

doi:10.1109/TNANO.2009.2021995

Electrical characteristics of hybrid nanoparticle nanowire devices

Dong Young Jeong, Kihyun Keem, Byoungjun Park, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Gold nanoparticles synthesized by a colloidal method were deposited in an Al₂ O₃dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al₂ O ₃-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticlenanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al ₂ O₃ tunneling oxide layer.

Original language	English
Article number	4907083
Pages (from-to)	650-653
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	8
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2009.2021995
Publication status	Published - 2009 Sept

Keywords

FET logic devices
FET memory integrated circuits
Memories
Nanotechnology

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2009.2021995

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title = "Electrical characteristics of hybrid nanoparticle nanowire devices",

abstract = "Gold nanoparticles synthesized by a colloidal method were deposited in an Al2 O3dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al2 O 3-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticlenanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O3 tunneling oxide layer.",

keywords = "FET logic devices, FET memory integrated circuits, Memories, Nanotechnology",

author = "Jeong, {Dong Young} and Kihyun Keem and Byoungjun Park and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: Manuscript received May 15, 2007. First published May 2, 2009; current version published September 4, 2009. This work was supported by the National R&D Project for Nano Science and Technology under Grant 10022916-2006-22, by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), by the Korea Ministry of Commerce, Industry and Energy under Project “SystemIC2010,” by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory Program [R0A-2005-000-10045-02 (2007)], and by the Nano R&D Program (M10703000980-07M0300-98010). The review of this paper was arranged by Associate Editor J. Li. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = sep,

doi = "10.1109/TNANO.2009.2021995",

language = "English",

volume = "8",

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AU - Jeong, Dong Young

AU - Keem, Kihyun

AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: Manuscript received May 15, 2007. First published May 2, 2009; current version published September 4, 2009. This work was supported by the National R&D Project for Nano Science and Technology under Grant 10022916-2006-22, by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), by the Korea Ministry of Commerce, Industry and Energy under Project “SystemIC2010,” by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory Program [R0A-2005-000-10045-02 (2007)], and by the Nano R&D Program (M10703000980-07M0300-98010). The review of this paper was arranged by Associate Editor J. Li. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/9

Y1 - 2009/9

N2 - Gold nanoparticles synthesized by a colloidal method were deposited in an Al2 O3dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al2 O 3-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticlenanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O3 tunneling oxide layer.

AB - Gold nanoparticles synthesized by a colloidal method were deposited in an Al2 O3dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al2 O 3-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticlenanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O3 tunneling oxide layer.

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Electrical characteristics of hybrid nanoparticle nanowire devices

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Keywords

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