Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

Joon Ho Oh; Kyoung Kook Kim; Hyun Gi Hong; Kyeong Jae Byeon; Heon Lee; Sang Won Yoon; Jae Pyoung Ahn; Tae Yeon Seong

doi:10.1016/j.mssp.2010.12.005

Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

Joon Ho Oh, Kyoung Kook Kim, Hyun Gi Hong, Kyeong Jae Byeon, Heon Lee, Sang Won Yoon, Jae Pyoung Ahn, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×10³ Ω cm ² upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.

Original language	English
Pages (from-to)	272-275
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	13
Issue number	4
DOIs	https://doi.org/10.1016/j.mssp.2010.12.005
Publication status	Published - 2010 Dec

Keywords

ITO
Light-emitting diode
Ohmic contact
Transparent electrode

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2010.12.005

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@article{53b960cbbbdb4e70bb3e21d20d391217,

title = "Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes",

abstract = "We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.",

keywords = "ITO, Light-emitting diode, Ohmic contact, Transparent electrode",

author = "Oh, {Joon Ho} and Kim, {Kyoung Kook} and Hong, {Hyun Gi} and Byeon, {Kyeong Jae} and Heon Lee and Yoon, {Sang Won} and Ahn, {Jae Pyoung} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), the National Research Foundation grant through World Class University program ( R33-2008-000-10025-0 ) and the ERC Program ( 2009-0064868 ).",

year = "2010",

month = dec,

doi = "10.1016/j.mssp.2010.12.005",

language = "English",

volume = "13",

pages = "272--275",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

AU - Oh, Joon Ho

AU - Kim, Kyoung Kook

AU - Hong, Hyun Gi

AU - Byeon, Kyeong Jae

AU - Lee, Heon

AU - Yoon, Sang Won

AU - Ahn, Jae Pyoung

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government ( KRF-2008-313-D00593 ), the National Research Foundation grant through World Class University program ( R33-2008-000-10025-0 ) and the ERC Program ( 2009-0064868 ).

PY - 2010/12

Y1 - 2010/12

N2 - We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.

AB - We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.

KW - ITO

KW - Light-emitting diode

KW - Ohmic contact

KW - Transparent electrode

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U2 - 10.1016/j.mssp.2010.12.005

DO - 10.1016/j.mssp.2010.12.005

M3 - Article

AN - SCOPUS:79952618211

SN - 1369-8001

VL - 13

SP - 272

EP - 275

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4

ER -

Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes

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Keywords

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