Abstract
We have investigated the annealing-induced improved electrical properties of In(10 nm)/ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75×103 Ω cm 2 upon annealing at 650 °C in air. X-ray photoemission spectroscopy (XPS) Ga 2p core levels obtained from the interface regions before and after annealing indicate a large band-bending of p-GaN, resulting in an increase in the Schottky barrier height. STEM/energy dispersive X-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-oxide. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. It is also shown that patterning by nano-imprint lithography improves the light output power of blue LEDs by 1828% as compared to that of LEDs fabricated with unpatterned In/ITO contacts.
Original language | English |
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Pages (from-to) | 272-275 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 13 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 Dec |
Keywords
- ITO
- Light-emitting diode
- Ohmic contact
- Transparent electrode
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering