Electrical characteristics of metal-Al2O3-Si structure deposited by ICBE technique for application of semiconductor device fabrication

Man Y. Sung; Y. C. Kim; B. M. Moon; K. V. Rao; Dong H. Rhie

Electrical characteristics of metal-Al₂O₃-Si structure deposited by ICBE technique for application of semiconductor device fabrication

Man Y. Sung, Y. C. Kim, B. M. Moon, K. V. Rao, Dong H. Rhie

Research output: Contribution to journal › Conference article › peer-review

Abstract

Deposition of Al₂O₃ films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al₂O₃-Si structure and the dielectric breakdown of Al₂O₃ were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.

Original language	English
Pages (from-to)	786-792
Number of pages	7
Journal	Proceedings - Electronic Components and Technology Conference
Publication status	Published - 1995
Event	Proceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA Duration: 1995 May 21 → 1995 May 24

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{30d831447be8454d9344591c4aad0671,

title = "Electrical characteristics of metal-Al2O3-Si structure deposited by ICBE technique for application of semiconductor device fabrication",

abstract = "Deposition of Al2O3 films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al2O3-Si structure and the dielectric breakdown of Al2O3 were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.",

author = "Sung, {Man Y.} and Kim, {Y. C.} and Moon, {B. M.} and Rao, {K. V.} and Rhie, {Dong H.}",

year = "1995",

language = "English",

pages = "786--792",

journal = "Proceedings - Electronic Components and Technology Conference",

issn = "0569-5503",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 45th Electronic Components & Technology Conference ; Conference date: 21-05-1995 Through 24-05-1995",

}

TY - JOUR

T1 - Electrical characteristics of metal-Al2O3-Si structure deposited by ICBE technique for application of semiconductor device fabrication

AU - Sung, Man Y.

AU - Kim, Y. C.

AU - Moon, B. M.

AU - Rao, K. V.

AU - Rhie, Dong H.

PY - 1995

Y1 - 1995

N2 - Deposition of Al2O3 films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al2O3-Si structure and the dielectric breakdown of Al2O3 were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.

AB - Deposition of Al2O3 films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al2O3-Si structure and the dielectric breakdown of Al2O3 were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.

UR - http://www.scopus.com/inward/record.url?scp=0029238832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029238832&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029238832

SN - 0569-5503

SP - 786

EP - 792

JO - Proceedings - Electronic Components and Technology Conference

JF - Proceedings - Electronic Components and Technology Conference

T2 - Proceedings of the 1995 45th Electronic Components & Technology Conference

Y2 - 21 May 1995 through 24 May 1995

ER -

Electrical characteristics of metal-Al₂O₃-Si structure deposited by ICBE technique for application of semiconductor device fabrication

Abstract

ASJC Scopus subject areas

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