Abstract
Deposition of Al2O3 films by Ionized Cluster Beam Epitaxy (ICBE) at low substrate temperature is described. Details of the film deposition system and fundamental characteristics of the Al-Al2O3-Si structure and the dielectric breakdown of Al2O3 were studied. Aluminum oxide offers unique advantages over the conventional silicon dioxide gate insulator: greater resistance to ionic motion, better radiation hardness, higher possibility of obtaining low threshold voltage in MOSFETs and use as gate insulator in nonvolatile memory devices.
Original language | English |
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Pages (from-to) | 786-792 |
Number of pages | 7 |
Journal | Proceedings - Electronic Components and Technology Conference |
Publication status | Published - 1995 |
Event | Proceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA Duration: 1995 May 21 → 1995 May 24 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering