Abstract
Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 × 10 cm3) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.
Original language | English |
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Pages (from-to) | 319-321 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- Contact
- GaN
- N-polar
- Schottky barrier heights (SBHs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering