Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer

Hyunjea Lee; Ji Heon Kim; Cheol Jin Lee

doi:10.1063/1.4971258

Electrical characteristics of MoSe₂ TFTs dependent on the Al₂O₃ capping layer

Hyunjea Lee, Ji Heon Kim, Cheol Jin Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Back-gated MoSe₂ thin-film transistors (TFTs) with an Al₂O₃-capping layer were fabricated, and the device characteristics of the MoSe₂ TFTs that are dependent on the Al₂O₃-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe₂ TFTs was negatively shifted with the Al₂O₃-capping layer. The on/off-current ratio of the MoSe₂ TFTs is approximately six decades regardless of the Al₂O₃-capping layer, but the field-effect mobility was greatly increased from 2.86 cm²/Vs to 10.26 cm²/Vs after the deposition of the Al₂O₃-capping layer. According to the results of this study, the Al₂O₃-capping layer can enhance the device characteristics of MoSe₂ TFTs.

Original language	English
Article number	222105
Journal	Applied Physics Letters
Volume	109
Issue number	22
DOIs	https://doi.org/10.1063/1.4971258
Publication status	Published - 2016 Nov 28

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4971258

Cite this

@article{002b398583904f7f9ac2a4ccea146ecc,

title = "Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer",

abstract = "Back-gated MoSe2 thin-film transistors (TFTs) with an Al2O3-capping layer were fabricated, and the device characteristics of the MoSe2 TFTs that are dependent on the Al2O3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2 TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2 TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm2/Vs to 10.26 cm2/Vs after the deposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the device characteristics of MoSe2 TFTs.",

author = "Hyunjea Lee and Kim, {Ji Heon} and Lee, {Cheol Jin}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = nov,

day = "28",

doi = "10.1063/1.4971258",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer

AU - Lee, Hyunjea

AU - Kim, Ji Heon

AU - Lee, Cheol Jin

PY - 2016/11/28

Y1 - 2016/11/28

N2 - Back-gated MoSe2 thin-film transistors (TFTs) with an Al2O3-capping layer were fabricated, and the device characteristics of the MoSe2 TFTs that are dependent on the Al2O3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2 TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2 TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm2/Vs to 10.26 cm2/Vs after the deposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the device characteristics of MoSe2 TFTs.

AB - Back-gated MoSe2 thin-film transistors (TFTs) with an Al2O3-capping layer were fabricated, and the device characteristics of the MoSe2 TFTs that are dependent on the Al2O3-capping-layer passivation were investigated. The output drain current was doubled, the fluctuation of the output current was suppressed, and the threshold voltage of the MoSe2 TFTs was negatively shifted with the Al2O3-capping layer. The on/off-current ratio of the MoSe2 TFTs is approximately six decades regardless of the Al2O3-capping layer, but the field-effect mobility was greatly increased from 2.86 cm2/Vs to 10.26 cm2/Vs after the deposition of the Al2O3-capping layer. According to the results of this study, the Al2O3-capping layer can enhance the device characteristics of MoSe2 TFTs.

UR - http://www.scopus.com/inward/record.url?scp=85000671212&partnerID=8YFLogxK

U2 - 10.1063/1.4971258

DO - 10.1063/1.4971258

M3 - Article

AN - SCOPUS:85000671212

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222105

ER -