Abstract
Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
Original language | English |
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Title of host publication | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
Pages | 628-629 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 2006 |
Event | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25 |
Publication series
Name | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
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Volume | 1 |
Other
Other | 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC |
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Country/Territory | Korea, Republic of |
City | Gyeongju |
Period | 06/10/22 → 06/10/25 |
Bibliographical note
Copyright:Copyright 2008 Elsevier B.V., All rights reserved.
Keywords
- Nano Crystal (NC)-Si
- Non-volatile memory device
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- General Materials Science