Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Jin Seok Yang; Seong Il Kim; Yong Tae Kim; Woon Jo Cho; Jung Ho Park

doi:10.1109/NMDC.2006.4388936

Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Jin Seok Yang, Seong Il Kim, Yong Tae Kim, Woon Jo Cho, Jung Ho Park

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. V_d-I_d, V_g-I_d characteristics of the fabricated device were also measured.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	628-629
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388936
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Nano Crystal (NC)-Si
Non-volatile memory device

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388936

Cite this

Yang, J. S., Kim, S. I., Kim, Y. T., Cho, W. J., & Park, J. H. (2006). Electrical characteristics of nano-crystal Si particles for nano floating gate memory. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 628-629). Article 4388936 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388936

Electrical characteristics of nano-crystal Si particles for nano floating gate memory. / Yang, Jin Seok; Kim, Seong Il; Kim, Yong Tae et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 628-629 4388936 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, JS, Kim, SI, Kim, YT, Cho, WJ & Park, JH 2006, Electrical characteristics of nano-crystal Si particles for nano floating gate memory. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388936, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 628-629, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388936

@inproceedings{606afad34a234b3f80de5bd82443d18a,

title = "Electrical characteristics of nano-crystal Si particles for nano floating gate memory",

abstract = "Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.",

keywords = "Nano Crystal (NC)-Si, Non-volatile memory device",

author = "Yang, {Jin Seok} and Kim, {Seong Il} and Kim, {Yong Tae} and Cho, {Woon Jo} and Park, {Jung Ho}",

year = "2006",

doi = "10.1109/NMDC.2006.4388936",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "628--629",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

}

TY - GEN

T1 - Electrical characteristics of nano-crystal Si particles for nano floating gate memory

AU - Yang, Jin Seok

AU - Kim, Seong Il

AU - Kim, Yong Tae

AU - Cho, Woon Jo

AU - Park, Jung Ho

PY - 2006

Y1 - 2006

N2 - Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.

AB - Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.

KW - Nano Crystal (NC)-Si

KW - Non-volatile memory device

UR - http://www.scopus.com/inward/record.url?scp=50249094271&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249094271&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388936

DO - 10.1109/NMDC.2006.4388936

M3 - Conference contribution

AN - SCOPUS:50249094271

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 628

EP - 629

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Electrical characteristics of nano-crystal Si particles for nano floating gate memory

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this