TY - GEN
T1 - Electrical characteristics of nano-crystal Si particles for nano floating gate memory
AU - Yang, Jin Seok
AU - Kim, Seong Il
AU - Kim, Yong Tae
AU - Cho, Woon Jo
AU - Park, Jung Ho
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
AB - Nonvolatile memory device was fabricated by using Nano-Crystal(NC)-Si particles. NC-Si particles had a wide size distribution of 1-5nm and an average size of 2.7nm, which were sufficiently small to indicate the quantum effect for silicon. The memory window was analyzed by C-V characteristic of NC-Si particles. Vd-Id, Vg-Id characteristics of the fabricated device were also measured.
KW - Nano Crystal (NC)-Si
KW - Non-volatile memory device
UR - http://www.scopus.com/inward/record.url?scp=50249094271&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249094271&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2006.4388936
DO - 10.1109/NMDC.2006.4388936
M3 - Conference contribution
AN - SCOPUS:50249094271
SN - 1424405408
SN - 9781424405404
T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
SP - 628
EP - 629
BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Y2 - 22 October 2006 through 25 October 2006
ER -