Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires

Su Heon Hong; Myung Gil Kang; Byung Sung Kim; Duk Soo Kim; Jae Hyun Ahn; Dongmok Whang; Sanghoon Sull; Sung Woo Hwang

doi:10.1016/j.sse.2010.11.012

Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires

Su Heon Hong, Myung Gil Kang, Byung Sung Kim, Duk Soo Kim, Jae Hyun Ahn, Dongmok Whang, Sanghoon Sull, Sung Woo Hwang

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors.

Original language	English
Pages (from-to)	130-134
Number of pages	5
Journal	Solid-State Electronics
Volume	56
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.11.012
Publication status	Published - 2011 Feb

Keywords

Electron transport
Silicide-silicon heterojunction
Silicon nanowire

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2010.11.012

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title = "Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires",

abstract = "Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors.",

keywords = "Electron transport, Silicide-silicon heterojunction, Silicon nanowire",

author = "Hong, {Su Heon} and Kang, {Myung Gil} and Kim, {Byung Sung} and Kim, {Duk Soo} and Ahn, {Jae Hyun} and Dongmok Whang and Sanghoon Sull and Hwang, {Sung Woo}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MEST) (No. 2010-000029). ",

year = "2011",

month = feb,

doi = "10.1016/j.sse.2010.11.012",

language = "English",

volume = "56",

pages = "130--134",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires

AU - Hong, Su Heon

AU - Kang, Myung Gil

AU - Kim, Byung Sung

AU - Kim, Duk Soo

AU - Ahn, Jae Hyun

AU - Whang, Dongmok

AU - Sull, Sanghoon

AU - Hwang, Sung Woo

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MEST) (No. 2010-000029).

PY - 2011/2

Y1 - 2011/2

N2 - Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors.

AB - Electronic characteristics of silicide/silicon interface were studied in the suspended, chemically synthesized silicon nanowires (SiNWs). Step-by-step intrusion of a silicide/Si interface along the axial direction of a suspended silicon nanowire was performed by repeated thermal annealing cycles, and the current-voltage (I-V) characteristics of the annealed silicide/SiNW/silicide structure were measured at each cycle. The intruded length of the silicide was found to be directly proportional to the total annealing time, but the rate of silicidation was much smaller than previous works on similar silicide/SiNWs. A structural kink with Ni atoms diffused along the sidewall created a secondary source of silicidation, resulting in anomalous I-V characteristics. The measured I-V including this unintentional silicidation in the Si channel was explained by various combinations of Schottky barriers and resistors.

KW - Electron transport

KW - Silicide-silicon heterojunction

KW - Silicon nanowire

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U2 - 10.1016/j.sse.2010.11.012

DO - 10.1016/j.sse.2010.11.012

M3 - Article

AN - SCOPUS:78751643908

SN - 0038-1101

VL - 56

SP - 130

EP - 134

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Electrical characteristics of nickel silicide-silicon heterojunction in suspended silicon nanowires

Abstract

Keywords

ASJC Scopus subject areas

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