Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation

K. H. Baik, B. Luo, J. Kim, S. J. Pearton, F. Ren

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy