Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo; Jihyun Kim; F. Ren; J. K. Gillespie; R. C. Fitch; J. Sewell; R. Dettmer; G. D. Via; A. Crespo; T. J. Jenkins; B. P. Gila; A. H. Onstine; K. K. Allums; C. R. Abernathy; S. J. Pearton; R. Dwivedi; T. N. Fogarty; R. Wilkins

doi:10.1063/1.1559631

Electrical characteristics of proton-irradiated Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors

B. Luo, Jihyun Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins

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Abstract

A study was performed on electrical characteristics of proton-irradiated Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors (HEMT). It was found that devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices. The results showed that the changes in device performance could be attributed completely to bulk trapping effects.

Original language	English
Pages (from-to)	1428-1430
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.1559631
Publication status	Published - 2003 Mar 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Luo, B., Kim, J., Ren, F., Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., & Wilkins, R. (2003). Electrical characteristics of proton-irradiated Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 82(9), 1428-1430. https://doi.org/10.1063/1.1559631

Luo, B, Kim, J, Ren, F, Gillespie, JK, Fitch, RC, Sewell, J, Dettmer, R, Via, GD, Crespo, A, Jenkins, TJ, Gila, BP, Onstine, AH, Allums, KK, Abernathy, CR, Pearton, SJ, Dwivedi, R, Fogarty, TN & Wilkins, R 2003, 'Electrical characteristics of proton-irradiated Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors', Applied Physics Letters, vol. 82, no. 9, pp. 1428-1430. https://doi.org/10.1063/1.1559631

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title = "Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors",

abstract = "A study was performed on electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMT). It was found that devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices. The results showed that the changes in device performance could be attributed completely to bulk trapping effects.",

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year = "2003",

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AU - Ren, F.

AU - Gillespie, J. K.

AU - Fitch, R. C.

AU - Sewell, J.

AU - Dettmer, R.

AU - Via, G. D.

AU - Crespo, A.

AU - Jenkins, T. J.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Allums, K. K.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Dwivedi, R.

AU - Fogarty, T. N.

AU - Wilkins, R.

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AB - A study was performed on electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (HEMT). It was found that devices with an AlGaN cap layer showed less degradation in dc characteristics than comparable GaN-cap devices. The results showed that the changes in device performance could be attributed completely to bulk trapping effects.

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Electrical characteristics of proton-irradiated Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors

Abstract

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