Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Sungjoo Song; Dae Hyun Kim; Daesung Kang; Tae Yeon Seong

doi:10.1007/s11664-016-4737-5

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Sungjoo Song, Dae Hyun Kim, Daesung Kang, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow–green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; Φ_B) on the work function of metals (Φ_M). In this work, SBHs and their dependence on Φ_M at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dΦ_B/dΦ_M) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at ~0.85 eV above the valence-band edge.

Original language	English
Pages (from-to)	5297-5301
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	10
DOIs	https://doi.org/10.1007/s11664-016-4737-5
Publication status	Published - 2016 Oct 1

Bibliographical note

Publisher Copyright:
© 2016, The Minerals, Metals & Materials Society.

Keywords

AlGaInP
GaP
Schottky barrier height
TFE model
carrier transport mechanism

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-016-4737-5

Cite this

@article{d75b6c373f514e32919c413bad85bc05,

title = "Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism",

abstract = "Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow–green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; ΦB) on the work function of metals (ΦM). In this work, SBHs and their dependence on ΦM at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dΦB/dΦM) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at ~0.85 eV above the valence-band edge.",

keywords = "AlGaInP, GaP, Schottky barrier height, TFE model, carrier transport mechanism",

author = "Sungjoo Song and Kim, {Dae Hyun} and Daesung Kang and Seong, {Tae Yeon}",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

year = "2016",

month = oct,

day = "1",

doi = "10.1007/s11664-016-4737-5",

language = "English",

volume = "45",

pages = "5297--5301",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Electrical Characteristics of Schottky Contacts to p-Type (001) GaP

T2 - Understanding of Carrier Transport Mechanism

AU - Song, Sungjoo

AU - Kim, Dae Hyun

AU - Kang, Daesung

AU - Seong, Tae Yeon

PY - 2016/10/1

Y1 - 2016/10/1

N2 - Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow–green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; ΦB) on the work function of metals (ΦM). In this work, SBHs and their dependence on ΦM at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dΦB/dΦM) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at ~0.85 eV above the valence-band edge.

AB - Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow–green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; ΦB) on the work function of metals (ΦM). In this work, SBHs and their dependence on ΦM at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dΦB/dΦM) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at ~0.85 eV above the valence-band edge.

KW - AlGaInP

KW - GaP

KW - Schottky barrier height

KW - TFE model

KW - carrier transport mechanism

UR - http://www.scopus.com/inward/record.url?scp=84976339926&partnerID=8YFLogxK

U2 - 10.1007/s11664-016-4737-5

DO - 10.1007/s11664-016-4737-5

M3 - Article

AN - SCOPUS:84976339926

SN - 0361-5235

VL - 45

SP - 5297

EP - 5301

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Abstract

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Keywords

ASJC Scopus subject areas

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