Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization

Dong Ho Kim; Cheong Hyun Roh; Hong Joo Song; Hoon Kim; Cheol Koo Hanh; Shi Jong Leem; Tae Geun Kim

doi:10.3938/jkps.50.880

Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization

Dong Ho Kim, Cheong Hyun Roh, Hong Joo Song, Hoon Kim, Cheol Koo Hanh, Shi Jong Leem, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al_0.2Ga_0.8As charge layer (N_a = 1 × 10¹⁸/cm³), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of -12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.

Original language	English
Pages (from-to)	880-884
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.880
Publication status	Published - 2007 Mar

Keywords

Avalanche photodetector (APD)
Charge and muiltiplication (SACM)
InAs self-assembled quantum dots (SA-QDs)
Resonant-cavity (RC)
Separate absorption

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.50.880

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title = "Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization",

abstract = "We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al0.2Ga0.8As charge layer (Na = 1 × 1018/cm3), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of -12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.",

keywords = "Avalanche photodetector (APD), Charge and muiltiplication (SACM), InAs self-assembled quantum dots (SA-QDs), Resonant-cavity (RC), Separate absorption",

author = "Kim, {Dong Ho} and Roh, {Cheong Hyun} and Song, {Hong Joo} and Hoon Kim and Hanh, {Cheol Koo} and Leem, {Shi Jong} and Kim, {Tae Geun}",

year = "2007",

month = mar,

doi = "10.3938/jkps.50.880",

language = "English",

volume = "50",

pages = "880--884",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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T1 - Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization

AU - Kim, Dong Ho

AU - Roh, Cheong Hyun

AU - Song, Hong Joo

AU - Kim, Hoon

AU - Hanh, Cheol Koo

AU - Leem, Shi Jong

AU - Kim, Tae Geun

PY - 2007/3

Y1 - 2007/3

N2 - We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al0.2Ga0.8As charge layer (Na = 1 × 1018/cm3), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of -12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.

AB - We report on the electrical characteristics of the InAs self-assembled quantum dots (SA-QDs) resonant-cavity separate absorption, charge, and multiplication avalanche photodetector (RC-SACM APD) improved by optimizing the layer parameters, such as the anti-node position of an incident optical standing wave of the InAs QDs as an light-absorbing layer, the doping concentration of the Al0.2Ga0.8As charge layer (Na = 1 × 1018/cm3), and the layer thickness calibrated by using Bragg's quarter-wavelength rule. The optimized InAs QDs RC-SACM APD exhibited very low dark current of 163 pA, a high photocurrent of 66 nA, and a very low breakdown voltage of -12.3 V. In addition, the avalanche multiplication gain was remarkably increased up to 1648.

KW - Avalanche photodetector (APD)

KW - Charge and muiltiplication (SACM)

KW - InAs self-assembled quantum dots (SA-QDs)

KW - Resonant-cavity (RC)

KW - Separate absorption

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DO - 10.3938/jkps.50.880

M3 - Article

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SN - 0374-4884

VL - 50

SP - 880

EP - 884

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Electrical characteristics of the resonant-cavity separate absorption, charge, and multiplication avalanche photodetector improved by device optimization

Abstract

Keywords

ASJC Scopus subject areas

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