Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on n-Al0.6Ga0.4N

Kee Baek Sim; Su Kyung Kim; Tae Yeon Seong; Hiroshi Amano

doi:10.1149/2162-8777/aca1df

Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on n-Al_0.6Ga_0.4N

Kee Baek Sim, Su Kyung Kim, Tae Yeon Seong, Hiroshi Amano

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the fabrication of high-barrier-height and thermally reliable Schottky contacts to n-Al_0.6Ga_0.4N by using an Ag-Pd-Cu (APC) alloy. The Schottky barrier heights (SBHs) and ideality factors computed using the current-voltage (I-V) model ranged from 0.82 to 0.97 eV and from 3.15 to 3.44, respectively. The barrier inhomogeneity model and capacitance-voltage (C-V) method yielded higher SBHs (1.62-2.19 eV) than those obtained using the I-V model. The 300 °C-annealed APC sample exhibited more uniform electrical characteristics than the 500 °C-annealed Ni/Au Schottky samples (each with the best Schottky behavior). Furthermore, the scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) results indicated that the APC Schottky contacts were more thermally stable than the Ni/Au contacts. On the basis of the X-ray photoemission spectroscopy (XPS) results, the improved Schottky characteristics of the APC alloy contacts are described and discussed.

Original language	English
Article number	115007
Journal	ECS Journal of Solid State Science and Technology
Volume	11
Issue number	11
DOIs	https://doi.org/10.1149/2162-8777/aca1df
Publication status	Published - 2022 Nov

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF) of Korea (NRF-2017K1A1A2013160 and NRF-2022R1A2C2006887).

Publisher Copyright:
© 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2162-8777/aca1df

Cite this

@article{59c99c4d1cf843839581e7a176e2f9da,

title = "Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on n-Al0.6Ga0.4N",

abstract = "We report the fabrication of high-barrier-height and thermally reliable Schottky contacts to n-Al0.6Ga0.4N by using an Ag-Pd-Cu (APC) alloy. The Schottky barrier heights (SBHs) and ideality factors computed using the current-voltage (I-V) model ranged from 0.82 to 0.97 eV and from 3.15 to 3.44, respectively. The barrier inhomogeneity model and capacitance-voltage (C-V) method yielded higher SBHs (1.62-2.19 eV) than those obtained using the I-V model. The 300 °C-annealed APC sample exhibited more uniform electrical characteristics than the 500 °C-annealed Ni/Au Schottky samples (each with the best Schottky behavior). Furthermore, the scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) results indicated that the APC Schottky contacts were more thermally stable than the Ni/Au contacts. On the basis of the X-ray photoemission spectroscopy (XPS) results, the improved Schottky characteristics of the APC alloy contacts are described and discussed.",

author = "Sim, {Kee Baek} and Kim, {Su Kyung} and Seong, {Tae Yeon} and Hiroshi Amano",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) of Korea (NRF-2017K1A1A2013160 and NRF-2022R1A2C2006887). Publisher Copyright: {\textcopyright} 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",

year = "2022",

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journal = "ECS Journal of Solid State Science and Technology",

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T1 - Electrical Characteristics of Thermally Stable Ag-Pd-Cu Alloy Schottky Contacts on n-Al0.6Ga0.4N

AU - Sim, Kee Baek

AU - Kim, Su Kyung

AU - Seong, Tae Yeon

AU - Amano, Hiroshi

N1 - Funding Information: This work was supported by the National Research Foundation (NRF) of Korea (NRF-2017K1A1A2013160 and NRF-2022R1A2C2006887). Publisher Copyright: © 2022 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.

PY - 2022/11

Y1 - 2022/11

N2 - We report the fabrication of high-barrier-height and thermally reliable Schottky contacts to n-Al0.6Ga0.4N by using an Ag-Pd-Cu (APC) alloy. The Schottky barrier heights (SBHs) and ideality factors computed using the current-voltage (I-V) model ranged from 0.82 to 0.97 eV and from 3.15 to 3.44, respectively. The barrier inhomogeneity model and capacitance-voltage (C-V) method yielded higher SBHs (1.62-2.19 eV) than those obtained using the I-V model. The 300 °C-annealed APC sample exhibited more uniform electrical characteristics than the 500 °C-annealed Ni/Au Schottky samples (each with the best Schottky behavior). Furthermore, the scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) results indicated that the APC Schottky contacts were more thermally stable than the Ni/Au contacts. On the basis of the X-ray photoemission spectroscopy (XPS) results, the improved Schottky characteristics of the APC alloy contacts are described and discussed.

AB - We report the fabrication of high-barrier-height and thermally reliable Schottky contacts to n-Al0.6Ga0.4N by using an Ag-Pd-Cu (APC) alloy. The Schottky barrier heights (SBHs) and ideality factors computed using the current-voltage (I-V) model ranged from 0.82 to 0.97 eV and from 3.15 to 3.44, respectively. The barrier inhomogeneity model and capacitance-voltage (C-V) method yielded higher SBHs (1.62-2.19 eV) than those obtained using the I-V model. The 300 °C-annealed APC sample exhibited more uniform electrical characteristics than the 500 °C-annealed Ni/Au Schottky samples (each with the best Schottky behavior). Furthermore, the scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) results indicated that the APC Schottky contacts were more thermally stable than the Ni/Au contacts. On the basis of the X-ray photoemission spectroscopy (XPS) results, the improved Schottky characteristics of the APC alloy contacts are described and discussed.

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