Electrical characteristics of V/Ti/Au contacts to Ga-polar and N-polar n-gan prepared by different methods

Joon Woo Jeon; Seong Han Park; Se Yeon Jung; Jihyung Moon; June O. Song; Gon Namgoong; Tae Yeon Seong

doi:10.1149/1.3294501

Electrical characteristics of V/Ti/Au contacts to Ga-polar and N-polar n-gan prepared by different methods

Joon Woo Jeon, Seong Han Park, Se Yeon Jung, Jihyung Moon, June O. Song, Gon Namgoong, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have investigated the electrical properties of V (20 nm)/Ti (60 nm)/Au (20 nm) contacts to Ga- and N-polar n-GaN. Regardless of the crystal polarities, all the samples exhibit similar electrical characteristics. The as-deposited samples are ohmic. However, they become nonohmic when annealed at 300-500° C. The samples are ohmic again at 700°C. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, the ohmic and degradation behaviors are explained in terms of the formation of donorlike surface defects and Ga vacancies, which are generated by dry etching, the out-diffusion of Ga, and the formation of nitride phases.

Original language	English
Pages (from-to)	H125-H127
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1149/1.3294501
Publication status	Published - 2010

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Electrical characteristics of V/Ti/Au contacts to Ga-polar and N-polar n-gan prepared by different methods",

abstract = "We have investigated the electrical properties of V (20 nm)/Ti (60 nm)/Au (20 nm) contacts to Ga- and N-polar n-GaN. Regardless of the crystal polarities, all the samples exhibit similar electrical characteristics. The as-deposited samples are ohmic. However, they become nonohmic when annealed at 300-500° C. The samples are ohmic again at 700°C. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, the ohmic and degradation behaviors are explained in terms of the formation of donorlike surface defects and Ga vacancies, which are generated by dry etching, the out-diffusion of Ga, and the formation of nitride phases.",

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T1 - Electrical characteristics of V/Ti/Au contacts to Ga-polar and N-polar n-gan prepared by different methods

AU - Jeon, Joon Woo

AU - Park, Seong Han

AU - Jung, Se Yeon

AU - Moon, Jihyung

AU - Song, June O.

AU - Namgoong, Gon

AU - Seong, Tae Yeon

PY - 2010

Y1 - 2010

N2 - We have investigated the electrical properties of V (20 nm)/Ti (60 nm)/Au (20 nm) contacts to Ga- and N-polar n-GaN. Regardless of the crystal polarities, all the samples exhibit similar electrical characteristics. The as-deposited samples are ohmic. However, they become nonohmic when annealed at 300-500° C. The samples are ohmic again at 700°C. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, the ohmic and degradation behaviors are explained in terms of the formation of donorlike surface defects and Ga vacancies, which are generated by dry etching, the out-diffusion of Ga, and the formation of nitride phases.

AB - We have investigated the electrical properties of V (20 nm)/Ti (60 nm)/Au (20 nm) contacts to Ga- and N-polar n-GaN. Regardless of the crystal polarities, all the samples exhibit similar electrical characteristics. The as-deposited samples are ohmic. However, they become nonohmic when annealed at 300-500° C. The samples are ohmic again at 700°C. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, the ohmic and degradation behaviors are explained in terms of the formation of donorlike surface defects and Ga vacancies, which are generated by dry etching, the out-diffusion of Ga, and the formation of nitride phases.

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VL - 13

SP - H125-H127

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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Electrical characteristics of V/Ti/Au contacts to Ga-polar and N-polar n-gan prepared by different methods

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