Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Jeongmin Kang; Kihyun Keem; Dong Young Jeong; Sangsig Kim

doi:10.1143/JJAP.46.6227

Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Jeongmin Kang, Kihyun Keem, Dong Young Jeong, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm² V^-1 s^-1, and an I_on/I_off ratio of 10⁶. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at V_GS = 10V is less than 3%.

Original language	English
Pages (from-to)	6227-6229
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	9 B
DOIs	https://doi.org/10.1143/JJAP.46.6227
Publication status	Published - 2007 Sept 20

Keywords

FET
Flexible
Nanowire
ZnO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.46.6227

Cite this

Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates. / Kang, Jeongmin; Keem, Kihyun; Jeong, Dong Young et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 9 B, 20.09.2007, p. 6227-6229.

Research output: Contribution to journal › Article › peer-review

@article{5175a40311e34773817ac16d2386bf85,

title = "Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates",

abstract = "ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.",

keywords = "FET, Flexible, Nanowire, ZnO",

author = "Jeongmin Kang and Kihyun Keem and Jeong, {Dong Young} and Sangsig Kim",

year = "2007",

month = sep,

day = "20",

doi = "10.1143/JJAP.46.6227",

language = "English",

volume = "46",

pages = "6227--6229",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 B",

}

TY - JOUR

T1 - Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

AU - Kang, Jeongmin

AU - Keem, Kihyun

AU - Jeong, Dong Young

AU - Kim, Sangsig

PY - 2007/9/20

Y1 - 2007/9/20

N2 - ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

AB - ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

KW - FET

KW - Flexible

KW - Nanowire

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=34648815948&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.6227

DO - 10.1143/JJAP.46.6227

M3 - Article

AN - SCOPUS:34648815948

SN - 0021-4922

VL - 46

SP - 6227

EP - 6229

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 9 B

ER -

Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this