Abstract
ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.
Original language | English |
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Pages (from-to) | 6227-6229 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 46 |
Issue number | 9 B |
DOIs | |
Publication status | Published - 2007 Sept 20 |
Keywords
- FET
- Flexible
- Nanowire
- ZnO
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)