Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Jeongmin Kang; Kihyun Keem; Dong Young Jeong; Sangsig Kim

doi:10.1143/JJAP.46.6227

Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Jeongmin Kang^*
, Kihyun Keem
, Dong Young Jeong
, Sangsig Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm² V^-1 s^-1, and an I_on/I_off ratio of 10⁶. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at V_GS = 10V is less than 3%.

Original language	English
Pages (from-to)	6227-6229
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	9 B
DOIs	https://doi.org/10.1143/JJAP.46.6227
Publication status	Published - 2007 Sept 20

Keywords

FET
Flexible
Nanowire
ZnO

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.46.6227

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Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates. / Kang, Jeongmin; Keem, Kihyun; Jeong, Dong Young et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 9 B, 20.09.2007, p. 6227-6229.

Research output: Contribution to journal › Article › peer-review

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abstract = "ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77\%, the decrement of the drain current for the FET at VGS = 10V is less than 3\%.",

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N2 - ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

AB - ZnO nanowire field effect transistors were fabricated on flexible substrates of poly(ether sulfone) (PES) by bottom-up and photolithographic processes and their electrical characteristics were investigated. The fabrication of the flexible devices was achieved at a processing temperature of 150°C. A representative top-gate ZnO nanowire field effect transistor (FET) on a flexible substrate exhibits a peak transconductance of 179 nS, a field effect mobility of 10.7 cm2 V-1 s-1, and an Ion/Ioff ratio of 106. When the PES substrate is bent under a strain of 0.77%, the decrement of the drain current for the FET at VGS = 10V is less than 3%.

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Electrical characteristics of ZnO nanowire-based field-effect transistors on flexible plastic substrates

Abstract

Keywords

ASJC Scopus subject areas

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