Abstract
Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2× 1015 /cm2. The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including VDS - IDS, VG - IDS, and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states.
Original language | English |
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Pages (from-to) | K32-K34 |
Journal | Electrochemical and Solid-State Letters |
Volume | 13 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2010 |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering