Electrical characterization of 5 MeV proton-irradiated few layer graphene

G. Ko; H. Y. Kim; F. Ren; S. J. Pearton; J. Kim

doi:10.1149/1.3290777

Electrical characterization of 5 MeV proton-irradiated few layer graphene

G. Ko, H. Y. Kim, F. Ren, S. J. Pearton, J. Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2× 10¹⁵ /cm². The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including VDS - IDS, VG - IDS, and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states.

Original language	English
Pages (from-to)	K32-K34
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1149/1.3290777
Publication status	Published - 2010

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2× 1015 /cm2. The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including VDS - IDS, VG - IDS, and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states.",

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AB - Few layer graphene (FLG) samples contacted were irradiated with protons at an energy of 5 MeV and doses up to 2× 1015 /cm2. The electrical properties of ungated FLG sheets contacted by Pd/Au in a source (S)-drain (D) configuration, including VDS - IDS, VG - IDS, and the hole mobility, were compared before and after proton irradiation. After irradiation, it is observed that the ambipolar conduction of the FLG sheets was changed to a p-type conduction. The field-effect mobility of the hole carriers and the resistance in the graphene sheets greatly decreased because the proton irradiation increased the number of the surface states.

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Electrical characterization of 5 MeV proton-irradiated few layer graphene

Abstract

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