Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide

R. Mehandru; B. P. Gila; J. Kim; J. W. Johnson; K. P. Lee; B. Luo; A. H. Onstine; C. R. Abernathy; S. J. Pearton; F. Rena

doi:10.1149/1.1479298

Electrical characterization of GaN metal oxide semiconductor diode using Sc₂O₃ as the gate oxide

R. Mehandru, B. P. Gila, J. Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Rena

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

GaN metal oxide semiconductor diodes were demonstrated utilizing Sc₂O₃ as the gate oxide. Sc₂O₃ was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl₂ based discharges were used to remove Sc₂O₃, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 10¹¹ eV^-1 cm^-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Original language	English
Pages (from-to)	G51-G53
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	7
DOIs	https://doi.org/10.1149/1.1479298
Publication status	Published - 2002 Jul
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide",

abstract = "GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.",

author = "R. Mehandru and Gila, {B. P.} and J. Kim and Johnson, {J. W.} and Lee, {K. P.} and B. Luo and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and F. Rena",

year = "2002",

month = jul,

doi = "10.1149/1.1479298",

language = "English",

volume = "5",

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journal = "Electrochemical and Solid-State Letters",

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publisher = "Electrochemical Society Inc.",

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T1 - Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide

AU - Mehandru, R.

AU - Gila, B. P.

AU - Kim, J.

AU - Johnson, J. W.

AU - Lee, K. P.

AU - Luo, B.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Rena, F.

PY - 2002/7

Y1 - 2002/7

N2 - GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

AB - GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

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DO - 10.1149/1.1479298

M3 - Article

AN - SCOPUS:0036644184

SN - 1099-0062

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Electrical characterization of GaN metal oxide semiconductor diode using Sc₂O₃ as the gate oxide

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