Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide

R. Mehandru, B. P. Gila, J. Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Rena

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30 Citations (Scopus)


GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy system, using a scandium elemental source and an electron cyclotron resonance oxygen plasma. Ar/Cl2 based discharges were used to remove Sc2O3, to expose the underlying n-GaN for ohmic metal deposition in an inductively coupled plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher value was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Original languageEnglish
Pages (from-to)G51-G53
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2002 Jul
Externally publishedYes

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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