Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide

R. Mehandru, B. P. Gila, J. Kim, J. W. Johnson, K. P. Lee, B. Luo, A. H. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren

Research output: Contribution to journalConference articlepeer-review


GaN metal oxide semiconductor diodes were demonstrated utilizing Sc2O3 as the gate oxide. Sc2O3 was grown at 100°C on MOCVD grown n-GaN layers in a molecular beam epitaxy (MBE) system, using a scandium elemental source and an Electron Cyclotron Resonance (ECR) oxygen plasma. Ar/Cl2 based discharges was used to remove Sc2O3, in order to expose the underlying n-GaN for ohmic metal deposition in an Inductively Coupled Plasma system. Electron beam deposited Ti/Al/Pt/Au and Pt/Au were utilized as ohmic and gate metallizations, respectively. An interface trap density of 5 × 1011 eV-1 cm-2 was obtained with the Terman method. Conductance-voltage measurements were also used to estimate the interface trap density and a slightly higher number was obtained as compared to the Terman method. Results of capacitance measurements at elevated temperature (up to 300°C) indicated the presence of deep states near the interface.

Original languageEnglish
Pages (from-to)767-772
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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