Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Hong Yeol Kim, Jihyun Kim, Lu Liu, Chien Fong Lo, Fan Ren, Stephen J. Pearton

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13 Citations (Scopus)


In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to 60Co gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I DS-VDS) showed little change after lower dose gamma-ray irradiations (<200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at VGS = 0 V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 × 1010 cm-2 Mrad-1 in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In 0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions.

Original languageEnglish
Article number051210
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number5
Publication statusPublished - 2013 Sept

Bibliographical note

Funding Information:
The research at Korea University was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant No. 2012R1A1A2042761) and the Human Resources Development program (Grant No. 20124030200120) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry, and Energy. The work at University of Florida was supported by HDTRA (James Reed) under contract U.S. DOD HDTRA Grant No. 1-11-1-0020.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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